Sources of ultraviolet light and systems for its shaping for photoelectrical investigation of semiconductor structures

• Autorzy: Borowicz L. , Kudła A. , Machalica P. , Niemiec M.
• Języki publikacji: EN

Abstrakty

EN

Photoelectric method is one of the most precise methods for measuring parameters of semiconductor structures, e. g., contact potential difference or potential barrier high for internal photoemission. Those parameters determine such important MOS transistor parameter like the threshold voltage V_T or the flatband voltage V_FB. Application of the photoemission phenomenon requires effective utilisation of the light source's energy and focusing it on the surface of a small structure. This paper discusses the issues related to the construction of an illumination system for photoelectric tests of semiconductor structures for ultraviolet light range. Light sources as well as systems for radiation shaping were described. Additionally, advantages and disadvantages of mirror and lenses systems, possibility of correcting certain aberrations and obtaining appropriate frontal distance required for introducing micromanipulators with measurement needles were discussed. Information included in this paper had a major impact on the construction of the multitask system for photoelectric tests of semiconductor structures, the authors of which received the title Technology Master - Warsaw 2001 (Mistrz Techniki - Warszawa 2001) and the first level award of the Polish Federation of Engineering Association (Naczelna Organizacja Techniczna) for great technology achievements.

Słowa kluczowe

EN

UV light sources; semiconductor structures; illuminating systems; optical beam shaping; monochromator

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2002
• Tom: Vol. 10, No. 2
• Strony: 145--150
• Opis fizyczny: Bibliogr. 10 poz.

Twórcy

autor

Borowicz L.

• Industrial Institute of Electronic, 44/50 Długa Str., 00-241 Warsaw, Poland

autor

Kudła A.

• Institute of Electronic Technology, 32/46 Lotników Ave., 02-668 Warsaw, Poland

autor

Machalica P.

• Industrial Institute of Electronic, 44/50 Długa Str., 00-241 Warsaw, Poland

autor

Niemiec M.

• Industrial Institute of Electronic, 44/50 Długa Str., 00-241 Warsaw, Poland

Bibliografia

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• 2. S. Krawczyk, H. M. Przewłocki, and A. Jakubowski, "New ways to measure the work function difference in MOS structures," Tev. Phys. Appl. 17, 473-480 (1982).
• 3. H. M. Przewłocki "Determination of trapped charge distributions in the dielectric of a metal-oxide-semi-conductor structure," J. App. Phys. 57, 5359-5366 (1985).
• 4. H. M. Przewłocki and D. Brzezińska, "Dependence of the contact potential difference in MOS structures on processing conditions and material used," Proc. VI Int. School Physical Probl. in Microelectronics, 173, World Scientific Publ. Co. Ltd,. Singapore, 1989.
• 5. H. M. Przewłocki and D. Brzezińska, "Influence of post metallisation annealing on the contact potential difference in MOS structures," Proc. V Int. Workshop Physics of Semiconductor Dev., 379, World Scientific Publ. Co. Ltd., Singapore, 1989.
• 6. H. M. Przewłocki, "Photoelectric phenomena in Metal-Insulator-Semiconductor structures at low electric fields in the insulator," J. Appl. Phys. 78, 2550-2557 (1995).
• 7. H. M. Przewłocki, "The importance, the nature and the measurements methods of the MS factor in MOS devices," Electron. Technol. 27, 27-42 (1994).
• 8. H. M. Przewłocki and H. Z. Massoud, "Photoelectric investigation of the processing dependence of the effective contact potential difference in MOS devices," Project Report, 1997.
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• 10. G. M. Popow, Koncentriczeskije Opticzeskije Sistiemy i Ich Primienienie w Opticzeskom Priborostrojenii, Izdatielstwo Nauka, Moscow, 1969 (in Russian).