THz detectors based on Si-CMOS technology field effect transistors : advantages, limitations and perspectives for THz imaging and spectroscopy

• Autorzy: Marczewski J. , Coquillat D. , Knap W. , Kolacinski C. , Kopyt P. , Kucharski K. , Lusakowski J. , Obrebski D. , Tomaszewski D. , Yavorskiy D. , Zagrajek P. , Ryniec R. , Palka N.

Identyfikatory

DOI

10.1016/j.opelre.2018.08.002

• Języki publikacji: EN

Abstrakty

EN

Recent advances in THz detection with the use of CMOS technology have shown that this option has the potential to be a leading method of producing low-cost THz sensors with integrated readout systems. This review paper, based on authors’ years of experience, presents strengths and weaknesses of this solution. The article gives examples of some hints, regarding radiation coupling and readout systems. It shows that silicon CMOS technology is well adapted to the production of inexpensive imaging systems for sub-THz frequencies. As an example paper presents the demonstrator of a multipixel Si-CMOS THz spectroscopic system allowing for chemical identification of lactose. The THz detectors embedded in this system were manufactured using the CMOS process.

Słowa kluczowe

EN

submillimeter wave detectors; THz detectors; THz imaging; THZ spectroscopy; CMOS technology

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2018
• Tom: Vol. 26, No. 4
• Strony: 261--269
• Opis fizyczny: Bibliogr. 37 poz., rys., wykr.

Twórcy

autor

Marczewski J.

• Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warszawa, Poland

autor

Coquillat D.

• Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpellier, Montpellier, France

autor

Knap W.

• Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpellier, Montpellier, France
• Institute of High Pressure Physics of the Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland

autor

Kolacinski C.

• Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warszawa, Poland

autor

Kopyt P.

• Inst. of Radioelectronics and Multimedia Technology, Warsaw University of Technology, ul. Nowowiejska 15/19, 00-665 Warsaw, Poland

autor

Kucharski K.

• Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warszawa, Poland

autor

Lusakowski J.

• Faculty of Physics, University of Warsaw, ul. Hoza 69, 00-681 Warsaw, Poland

autor

Obrebski D.

• Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warszawa, Poland

autor

Tomaszewski D.

• Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warszawa, Poland

autor

Yavorskiy D.

• Faculty of Physics, University of Warsaw, ul. Hoza 69, 00-681 Warsaw, Poland

autor

Zagrajek P.

• Inst. of Optoelectronics, Military University of Technology, ul. gen. Witolda Urbanowicza 2, 00-908 Warsaw

autor

Ryniec R.

• Inst. of Optoelectronics, Military University of Technology, ul. gen. Witolda Urbanowicza 2, 00-908 Warsaw

autor

Palka N.

• Inst. of Optoelectronics, Military University of Technology, ul. gen. Witolda Urbanowicza 2, 00-908 Warsaw

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Uwagi

1. This work was partially supported by the National Center for Research and Development in Poland (grants Nos. PBS1/A9/11/2012 and 2016/22/E/ST7/00526), by ERANET RUS PLUS - EC project TERASENS (No. 149), by the Foundation for Polish Science (grants Nos. TEAM/2016-3/25 and TEAM/2016-3/26). We acknowledge also help of the project LIA-TERAMIR.

2. Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).