High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD

• Autorzy: Kopytko M. , Kębłowski A. , Gawron W. , Madejczyk P. , Kowalewski A , Jóźwikowski K

Identyfikatory

DOI

10.2478/s11772-013-0101-y

• Języki publikacji: EN

Abstrakty

EN

The paper reports on the first experimental results of the mid-wave infrared (MWIR) HgCdTe barrier detectors operated at near-room temperatures and fabricated using metal organic chemical vapor deposition (MOCVD). SIMS profiles let to compare projected and obtained structures and reveals interdiffusion processes between the layers. Undesirable iodine diffusion from cap to the barrier increase the valance band offset and is the key item in limiting the performance of HgCdTe nBn detector. However, MOCVD technology with a wide range of composition and donor/acceptor doping and without post grown annealing might be successfully adopted for barrier device architectures.

Słowa kluczowe

EN

MOCVD growth; HgCdTe photodetectors; barrier photodetectors; uncooled photodetectors; Auger suppression

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2013
• Tom: Vol. 21, No. 4
• Strony: 402--405
• Opis fizyczny: Bibliogr. 13 poz., rys., il.

Twórcy

autor

Kopytko M.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland

autor

Kębłowski A.

• Vigo System S.A., 129/133 Poznańska St., 05-850 Ożarów Mazowiecki, Poland

autor

Gawron W.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland

autor

Madejczyk P.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland

autor

Kowalewski A

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland

autor

Jóźwikowski K

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland

Bibliografia

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• 4. J. Piotrowski, “Hg1-xCdxTe infrared photodetectors”, In: Infrared photon detectors edited by A. Rogalski, Bellingham: SPIE Press, pp. 391-494, 1995.
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• 13. A. Piotrowski, P. Madejczyk, W. Gawron, K. Kłos, M. Romanis, M. Grudzień, J. Piotrowski, and A. Rogalski, “MOCVD growth of Hg1-xCdxTe heterostructures for uncooled infrared photodetectors”, Opto-Electron. Rev. 12, 453-458 (2004).