Effects of Al doping on defect behaviors of ZnO thin film as a photocatalyst

• Autorzy: Yu Fucheng , Hu Hailong , Wang Bolong , Li Haishan , Song Tianyun , Xu Boyu , He Ling , Wang Shu , Duan Hongyan

Identyfikatory

DOI

10.2478/msp-2019-0050

• Języki publikacji: EN

Abstrakty

EN

Al doped ZnO (AZO) thin films were prepared on silica substrates by sol-gel method. The films showed a hexagonal wurtzite structure with a preferred orientation along c-axis. Suitable Al doping dramatically improved the crystal quality compared to the undoped ZnO films. Dependent on the Al dopant concentration, the diffraction peak of (0 0 2) plane in XRD spectra showed at first right-shifting and then left-shifting, which was attributed to the change in defect concentration induced by the Al dopant. Photocatalytic properties of the AZO film were characterized by degradation of methyl orange (MO) under simulated solar light. The transmittance of the films was enhanced by the Al doping, and the maximum transmittance of 80 % in the visible region was observed in the sample with Al concentration of 1.5 at.% (mole fraction). The film with 1.5 at.% Al doping achieved also maximum photocatalytic activity of 68.6 % under solar light. The changes in the film parameters can be attributed to the variation in defect concentration induced by different Al doping content.

Słowa kluczowe

EN

sol-gel; ZnO thin film; Al doping; photocatalyst

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2019
• Tom: Vol. 37, No. 3
• Strony: 437--445
• Opis fizyczny: Bibliogr. 37 poz., tab., rys.

Twórcy

autor

Yu Fucheng

• School of Material Science and Engineering, School of Mechanical and Electrical Engineering, Lanzhou University of Technology, Lanzhou 730050, P. R. China

autor

Hu Hailong

• School of Material Science and Engineering, School of Mechanical and Electrical Engineering, Lanzhou University of Technology, Lanzhou 730050, P. R. China

autor

Wang Bolong

• School of Material Science and Engineering, School of Mechanical and Electrical Engineering, Lanzhou University of Technology, Lanzhou 730050, P. R. China

autor

Li Haishan

• School of Material Science and Engineering, School of Mechanical and Electrical Engineering, Lanzhou University of Technology, Lanzhou 730050, P. R. China

autor

Song Tianyun

• School of Material Science and Engineering, School of Mechanical and Electrical Engineering, Lanzhou University of Technology, Lanzhou 730050, P. R. China

autor

Xu Boyu

• School of Material Science and Engineering, School of Mechanical and Electrical Engineering, Lanzhou University of Technology, Lanzhou 730050, P. R. China

autor

He Ling

• School of Material Science and Engineering, School of Mechanical and Electrical Engineering, Lanzhou University of Technology, Lanzhou 730050, P. R. China

autor

Wang Shu

• School of Material Science and Engineering, School of Mechanical and Electrical Engineering, Lanzhou University of Technology, Lanzhou 730050, P. R. China

autor

Duan Hongyan

• School of Material Science and Engineering, School of Mechanical and Electrical Engineering, Lanzhou University of Technology, Lanzhou 730050, P. R. China

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Uwagi

PL

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).