AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell

• Autorzy: Dawidowski W. , Ściana B. , Zborowska-Lindert I. , Mikolásek M. , Latkowska M. , Radziewicz D. , Pucicki D. , Bielak K. , Badura M. , Kováč J. , Tłaczała M.

Identyfikatory

DOI

10.2478/eletel-2014-0018

• Języki publikacji: EN

Abstrakty

EN

Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed.

Słowa kluczowe

EN

dilute nitrides; AP MOVPE; subcell; tandem solar cell; J-V characteristics

• Wydawca: Polish Academy of Sciences, Committee of Electronics and Telecommunication
• Czasopismo: International Journal of Electronics and Telecommunications
• Rocznik: 2014
• Tom: Vol. 60, No. 2
• Strony: 151--156
• Opis fizyczny: Bibliogr. 18 poz., wykr.

Twórcy

autor

Dawidowski W.

• Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50–372 Wrocław, Poland

autor

Ściana B.

• Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50–372 Wrocław, Poland

autor

Zborowska-Lindert I.

• Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50–372 Wrocław, Poland

autor

Mikolásek M.

• Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava, Ilkovicova 3, 812 19 Bratislava, Slovakia

autor

Latkowska M.

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50–370, Poland

autor

Radziewicz D.

• Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50–372 Wrocław, Poland

autor

Pucicki D.

• Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50–372 Wrocław, Poland

autor

Bielak K.

• Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50–372 Wrocław, Poland

autor

Badura M.

• Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50–372 Wrocław, Poland

autor

Kováč J.

• Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava, Ilkovicova 3, 812 19 Bratislava, Slovakia

autor

Tłaczała M.

• Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50–372 Wrocław, Poland

Bibliografia

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