Multifractal characterization of epitaxial silicon carbide on silicon

• Autorzy: Ţălu Ş. , Stach S. , Ramazanov S. , Sobola D. , Ramazanov G.

Identyfikatory

DOI

10.1515/msp-2017-0049

• Języki publikacji: EN

Abstrakty

EN

The purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. The topography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the films growth. Multifractal geometry was used to characterize three-dimensional micro- and nano-size features of the surface. X-ray measurements and Raman spectroscopy were performed for analysis of the films composition. Two steps of morphology evolution during the growth were analyzed by multifractal analysis. The results contribute to the fabrication of silicon carbide large area substrates for micro- and nanoelectronic applications.

Słowa kluczowe

EN

surface roughness; multifractal analysis; atomic force microscopy; silicon carbide; film growth

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2017
• Tom: Vol. 35, No. 3
• Strony: 539--547
• Opis fizyczny: Bibliogr. 23 poz., rys.

Twórcy

autor

Ţălu Ş.

• Technical University of Cluj-Napoca, Faculty of Mechanical Engineering, Department of AET, Discipline of Descriptive Geometry and Engineering Graphics, 103-105 B-dul Muncii St., Cluj-Napoca 400641, Cluj, Romania

autor

Stach S.

• University of Silesia, Faculty of Computer Science and Materials Science, Institute of Informatics, Department of Biomedical Computer Systems, ul. Będzińska 39, 41-205 Sosnowiec, Poland

autor

Ramazanov S.

• SICLAB Limited liability company, 367030 Makhachkala, M. Yaragskogo 75, Dagestan Republic, Russia
• Dagestan State University, Faculty of Physics, 367015 Makhachkala, M. Gadjieva 43-a, Dagestan Republic, Russia

autor

Sobola D.

• Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno, Czech Republic

autor

Ramazanov G.

• Dagestan State University, Faculty of Physics, 367015 Makhachkala, M. Gadjieva 43-a, Dagestan Republic, Russia

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