Design of integrated readout circuit for NMOS THZ detectors based on chopper amplifier concept

• Autorzy: Kołaciński C , Obrębski D. , Zagrajek P.
• Języki publikacji: EN

Abstrakty

EN

This paper deals with design of readout circuit dedicated for NMOS-based terahertz detectors. The proposed architecture bases on chopper amplifier and instrumentation amplifier concepts. The main objectives were high gain (max. 100 dB) and proper operation with NMOS-based THz detectors. Three different architectures of measurement amplifier designed for the research project are discussed in this paper. The designed chip was manufactured in AMS C35B4 process (350 nm feature size). Another issue described in this paper is dedicated, non-typical testing environment. At the end a few measurement results are shown.

Słowa kluczowe

EN

NMOS-based terahertz detector; chopper amplifier; instrumentation amplifier; voltage controlled amplifier; programmable gain amplifier; readout circuit

PL

detektor terahercowy; chopper; wzmacniacz instrumentacyjny; wzmacniacz sterowany napięciem; wzmacniacz PGA; obwód odczytujący

• Wydawca: Lodz University of Technology. Department of Microelectronics and Computer Science
• Czasopismo: International Journal of Microelectronics and Computer Science
• Rocznik: 2014
• Tom: Vol. 5, nr 1
• Strony: 14--24
• Opis fizyczny: Bibliogr. 11 poz.

Twórcy

autor

Kołaciński C

• ICs and Systems Design Department, Institute of Electron Technology, Warsaw, Poland

autor

Obrębski D.

• ICs and Systems Design Department, Institute of Electron Technology, Warsaw, Poland

autor

Zagrajek P.

• Institute of Optoelectronics, Military University of Technology, Poland

Bibliografia

• [1] D. Veksler, F. Teppe, A. Dmitriev, V. Y. Kachorovskii, W. Knap, and M. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Physical Review B, vol. 73, no. 12, p. 125328, 2006.
• [2] E. Ojefors, N. Baktash, Y. Zhao, R. Hadi, H. Sherry, and U. R. Pfeiffer, “Terahertz imaging detectors in a 65-nm CMOS SOI technology,” in ESSCIRC, 2010 Proceedings of the. IEEE, 2010, pp. 486-489.
• [3] S. Boppel, A. Lisauskas, V. Krozer, and H. Roskos, “Performance and performance variations of sub-1 THZ detectors fabricated with 0.15 ,μm CMOS foundry process,” Electronics Letters, vol. 47, no. 11, pp. 661- 662, 2011.
• [4] M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current,” Physical review letters, vol. 71, no. 15, p. 2465, 1993.
• [5] S. Preu, S. Kim, R. Verma, P. Burke, M. Sherwin, and A. Gossard, “An improved model for non-resonant terahertz detection in field-effect transistors,” Journal of Applied Physics, vol. 111, no. 2, p. 024502, 2012.
• [6] J. Lusakowski, M. Białek, D. Yavorskiy, J. Marczewski, P. Kopyt, W. Gwarek, W. Knap, K. Kucharski, M. Grodner, M. Gorska et al., “Planar antennas for detection of 340 GHz band with single Si metal-oxide-semiconductor field-effect transistors,” in Infrared, Millimeter and Terahertz Waves (IRMMW-THZ), 20]I 36th International Conference on. IEEE, 2011, pp. 1-2.
• [7] D. Yavorskiy, J. Marczewski, K. Kucharski, P. Kopyt, W. Gwarek, M. Ratajczyk, W. Knap, B. Piętka, and J. Lusakowski, “THz Scanner Based on Planar Antenna-Supplied Silicon Field-Effect Transistors,” Photonics Letters of Poland, vol. 4, no. 3, pp. pp-100, 2012.
• [8] W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta et al., “Field effect transistors for terahertz detection: physics and first imaging applications,” Journal of Infrared, Millimeter; and Terahertz Waves, vol. 30, no. 12, pp. 1319 1337, 2009.
• [9] M. Sakowicz, M. Lifshits, O. Klimenko, F. Schuster, D. Coquillat, F. Teppe, and W. Knap, “Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects,” Journal of Applied Physics, vol. 110, no. 5, p. 054512, 2011.
• [10] B. Razavi, Design ofAnalog CMOS Integrated Circuits. MHHE, 2001, ch. 12 - Introduction to switched capacitor circuits, pp. 660-665.
• [11] AMS AG, “0.35/d CMOS Technology Selection Guide,” http://www.ams.com/eng/Products/Full-Service-Foundry/Process-Technology/CMOS/0.35-m-CMOS-Technology-Selection-Guide, [Online; accessed 05-March-2014].