Three-channel X-ray detection head for diagnostics of plasma in noisy environment

• Autorzy: Ryć L. , Kaczmarczyk J. , Martinez J. F. , Scholz M. , Słysz M.
• Konferencja: International Workshop on Dense Magnetised Plasmas IWDMP’2000 (12-14.10.2000 ; Kudowa Zdrój, Poland)
• Języki publikacji: EN

Abstrakty

EN

A compact, three-channel, noise-resistant detection head based on semiconductor detectors has been built for the diagnostics of X-ray emission from plasmas. It is useful in the energy range of 0.5–20 keV.

Słowa kluczowe

EN

high-temperature plasma; semiconductor detector; X-ray diagnostics

• Wydawca: Institute of Nuclear Chemistry and Technology
• Czasopismo: Nukleonika
• Rocznik: 2001
• Tom: Vol. 46, suppl. 1
• Strony: 95--97
• Opis fizyczny: Bibliogr. 4 poz., rys.

Twórcy

autor

Ryć L.

• Institute of Plasma Physics and Laser Microfusion, Hery 23, P.O. Box 49, 00-908 Warsaw, Poland, Tel.: [phone], Fax: [phone]

autor

Kaczmarczyk J.

• Institute of Plasma Physics and Laser Microfusion, Hery 23, P.O. Box 49, 00-908 Warsaw, Poland, Tel.: [phone], Fax: [phone]

autor

Martinez J. F.

• Instituto de Fisica del Plasma, Ciudad Universitaria, c.p. 1428 Pabellon 1, Buenos Aires, Argentina

autor

Scholz M.

• Institute of Plasma Physics and Laser Microfusion, Hery 23, P.O. Box 49, 00-908 Warsaw, Poland, Tel.: [phone], Fax: [phone]

autor

Słysz M.

• Institute of Electron Technology (ITE), Al. Lotników 32/46, 02-668 Warsaw, Poland

Bibliografia

• 1. Kaczmarczyk J, Paduch M, Ryc L, Tomaszewski K (1999) Fast detection head for X-ray diagnostics of plasma focus. J Tech Phys 40;1:391–394
• 2. Ryc L (1999) X-ray diagnostics of laser plasmas with the use of semiconductor detectors. In: Int Workshop on Plasma Diagnostics. Ghent, Belgium: 77–78
• 3. Słysz W, Ryc L (1997) Silicon photodiodes for registration of Xrays from laser plasma. In: Proc 6th Conf ELTE’97. Krynica, Poland: 174–179
• 4. Słysz W, Ryc L, W´grzecki M (2000) High-resistivity silicon p-i-ndiodes for detection of ionising radiation. In: Osvald J (ed) Proc 3rd Int EuroConf on Advanced Semiconductor Devices and Microsystems, ASDAM 2000, Smolenice Castle, Slovakia. IEEE Inc., Piscataway, pp 461–464