LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications

• Autorzy: Ściana B. , Badura M. , Dawidowski W. , Bielak K. , Radziewicz D. , Pucicki D. , Szyszka A. , Żelazna K. , Tłaczała M.

Identyfikatory

DOI

10.1515/oere-2016-0013

• Języki publikacji: EN

Abstrakty

EN

The work presents doping characteristics and properties of high Si-doped InGaAs epilayers lattice-matched to InP grown by low pressure metal-organic vapour phase epitaxy. Silane and disilane were used as dopant sources. The main task of investigations was to obtain heavily doped InGaAs epilayers suitable for usage as plasmon-confinement layers in the construction of mid-infrared InAlAs/InGaAs/InP quantum-cascade lasers (QCLs). It requires the doping concentration of 1×10¹⁹ cm⁻³ and 1×10²⁰ cm⁻³ for lasers working at 9 μm and 5 μm, respectively. The electron concentration increases linearly with the ratio of gas-phase molar fraction of the dopant to III group sources (IV/III). The highest electron concentrations suitable for InGaAs plasmon-contact layers of QCL was achieved only for disilane. We also observed a slight influence of the ratio of gas-phase molar fraction of V to III group sources (V/III) on the doping efficiency. Structural measurements using high-resolution X-ray diffraction revealed a distinct influence of the doping concentration on InGaAs composition what caused a lattice mismatch in the range of –240 ÷ –780 ppm for the samples doped by silane and disilane. It has to be taken into account during the growth of InGaAs contact layers to avoid internal stresses in QCL epitaxial structures.

Słowa kluczowe

EN

InGaAs/InP heterostructures; silicon doping; InGaAs plasmon-contact layer; quantum cascade laser

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2016
• Tom: Vol. 24, No. 2
• Strony: 95--102
• Opis fizyczny: Bibliogr. 18 poz., il., wykr.

Twórcy

autor

Ściana B.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wroclaw, Poland

autor

Badura M.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wroclaw, Poland

autor

Dawidowski W.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wroclaw, Poland

autor

Bielak K.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wroclaw, Poland

autor

Radziewicz D.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wroclaw, Poland

autor

Pucicki D.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wroclaw, Poland

autor

Szyszka A.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wroclaw, Poland

autor

Żelazna K.

• Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Technology, ul. Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

autor

Tłaczała M.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wroclaw, Poland

Bibliografia

• 1. J. Faist, F. Capasso, D.L. Sivco, C. Sirtori, A.L. Hutchinson, and A.Y. Cho, “Quantum cascade laser”, Science 264, 553–556 (1994).
• 2. C.A. Wang, R.K. Huang, A. Goyal, J.P. Donnelly, D.R. Calawa, S.G. Cann, F. O'Donnell, J.J. Plant, L.J. Missaggia, and G.W. Turner, “OMVPE growth of highly strain-balanced GaInAs/AlInAs/InP for quantum cascade lasers”, J. Crystal Growth 310, 5191–5197 (2008).
• 3. D.G. Revin, J.P. Commin, S.Y. Zhang, A.B. Krysa, K. Kennedy, and J.W. Cockburn, “InP-based midinfrared quantum cascade lasers for wavelengths below 4 μm”, IEEE J. Selected Topics in Quantum Electronics 17, 1417–1425 (2011).
• 4. C. Sirtori, J. Faist, F. Capasso, D.L. Sivco, A.L. Hutchinson, and A.Y. Cho, “Quantum cascade laser with plasmon-enhanced waveguide operating 8.4 μm wavelength”, Appl. Phys. Lett. 66, 3242–3244 (1995).
• 5. M. Bugajski, P. Gutowski, P. Karbownik, A. Kolek, G. Hałdaś, K. Pierściński, D. Pierścińska, J. KubackaTraczyk, I. Sankowska, A. Trajnerowicz, K. Kosiel, A. Szer- ling, J. Grzonka, K. Kurzydłowski, T. Slight, and W. Mere- dith, “Mid-IR quantum cascade lasers: Device technology and non-equilibrium Green's function modeling of electro-optical characteristics”, Phys. Status Solidi B 251, 1144–1157 (2014).
• 6. T. Gresch, Gain and waveguide engineering in mid-infrared quantum cascade lasers, Doctoral Dissertation – Diss. ETH No. 18732, pp. 113–119, Zurich, 2009.
• 7. M. Badura, K. Bielak, B. Ściana, D. Radziewicz, D. Pucicki, W. Dawidowski, and M. Tłaczała, „LP-MOVPE technology of InGaAs/GaAs heterostructures for application in Quantum Cascade Lasers”, Elektronika 11, 34–36 (2014).
• 8. A.R. Clawson, T.T. Vu, and D.I. Elder, “A comparison of IV and VI n-dopants for MOVPE-grown InP”, J. Crystal Growth 83, 211–218 (1987).
• 9. R.J. Field and S.K. Ghandhi, “Doping of gallium arsenide in a low pressure organometallic CVD system: I. Silane”, J. Crystal Growth 74, 543–550 (1986).
• 10. F. Martin, Jean-Michel Hartmann, V. Carron, and Y. Le Tiec, Chemistry in Microelectronics, ISTE Ltd and John Wiley & Sons, Inc., London, Hoboken, 2013.
• 11. L. Cheng-Wei, B. Lukose, M.O. Thompson, and P. Clancy, “Energetics of neutral Si dopants in InGaAs: An ab initio and semiempirical Tersoff model study”, Physical Review B 91, 094108-1-094108-11 (2015).
• 12. H.C. Casey Jr. and F. Stern, “Concentration-dependent absorption and spontaneous emission of heavily doped GaAs”, J. Appl. Phys. 47, 631–643 (1976).
• 13. E. Burstein, “Anomalous optical absorption limit in InSb”, Phys. Rev. 93, 632–633 (1954).
• 14. T.S. Moss, “The interpretation of the properties of indium antimonide”, Proc. Phys. Soc. (London) B 67, 775–782 (1954).
• 15. G.W. Charache, D.M. DePoy, J.E. Raynolds, P.F. Baldasaro, K.E. Miyano, T. Holden, F.H. Pollak, P.R. Sharps, M.L. Timmons, C.B. Geller, and W. Wolf, “Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1–xAs and InPyAs1–y”, J. Appl. Phys. 86, 452–458 (1999).
• 16. J.C. Li, M. Sokolich, T. Hussain, and P.M. Asbeck, “Phy sicalmodelling of degenerately doped compound semiconductors for high-performance HBT design”, Solid-State Electron. 50, 1440–1449 (2006).
• 17. M. Munoz, F.H. Pollak, M. Kahn, D. Ritter, L. Kronik, and G.M. Cohen, “Burstein-Moss shift of n-doped In0.53Ga0.47As/InP”, Phys. Rev. B 63, 233302-1-233302-3 (2001).
• 18. A. Tsukernik, D. Cheskis, O. Potashnik, A. Palevski, S. Barad, S. Luryi, and A. Cho, “Anomalous behaviour of the Fermi energy in heavily tin-doped InGaAs”, Eur. Phys. J. B 23, 341–344 (2001).

Uwagi

PL

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.