Determination of CdSxSe1-x thick films optical properties from reflection spectra

• Autorzy: Tivanov M. , Kaputskaya I. , Patryn A. , Saad A. , Survilo L. , Ostretsov E.

Identyfikatory

DOI

10.15199/48.2016.09.23

Warianty tytułu

PL

Wyznaczanie parametrów optycznych grubych warstw CdSxSe1-x z analizy widma odbicia

• Języki publikacji: EN

Abstrakty

EN

A method for determining the band gap value and the refractive index near the absorption edge from reflection spectra was tested for CdSxSe1-x films prepared using the screen-printing and sintering technique.

PL

Przeanalizowano metodę wyznaczenia szerokości przerwy energetycznej i współczynnika załamania z pomiarów widma współczynnika odbicie warstw CdSxSe1-x otrzymanych metodami sitodruku i konsolidacji termicznej (sintering technique).

Słowa kluczowe

EN

semiconductors; CdSxSe1-x; thick films; refractive index; reflection spectra

PL

półprzewodniki; warstwy CdSxSe1-x; współczynnik załamania; widmo odbicia

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2016
• Tom: R. 92, nr 9
• Strony: 88--90
• Opis fizyczny: Bibliogr. 19 poz., tab., wykr

Twórcy

autor

Tivanov M.

• Belarusian State University, Nezavisimosti av. 4, 220030 Minsk, Belarus

autor

Kaputskaya I.

• Belarusian State University, Nezavisimosti av. 4, 220030 Minsk, Belarus

autor

Patryn A.

• Koszalin University of Technology, Sniadeckich str. 2, 75-453 Koszalin, Poland

autor

Saad A.

• Al-Balqa Applied University, PO Box 4545, Amman 11953, Jordan

autor

Survilo L.

• SE “Center of LED and Optoelectronic Technologies of National Academy of Sciences of Belarus”, Logoiski trakt str. 22, 220090 Minsk, Belarus

autor

Ostretsov E.

• SE “Center of LED and Optoelectronic Technologies of National Academy of Sciences of Belarus”, Logoiski trakt str. 22, 220090 Minsk, Belarus

Bibliografia

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Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.