Quantum interactions of optical radiation with the defect centres in the tails of the forbidden band of amorphous materials

• Autorzy: Mazinov A , Shevchenko A , Bahov V

Identyfikatory

DOI

10.5277/oa140213

• Języki publikacji: EN

Abstrakty

EN

In this paper, the model approach that describes the quantum interaction of optical waves with the polycrystalline and amorphous semiconductor films is proposed. The absorption coefficient for active layers of semiconductor films is represented as the sum of pseudo-crystalline and amorphous components. Based on the proposed theoretical approach, we considered the long-wavelength optical absorption spectra of amorphous silicon in 1500–4000 cm–1 range. The resonant absorption centres were identified and were associated with V-V, I-V, V-V defect centres in a silicon gap with energies of 0.20–0.45 eV.

Słowa kluczowe

EN

resonant absorption centres; quantum interaction; semiconductor film; polycrystalline and amorphous silicon

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2014
• Tom: Vol. 44, nr 2
• Strony: 327--335
• Opis fizyczny: Bibliogr. 16 poz., rys., wykr., tab.

Twórcy

autor

Mazinov A

• Taurida National Vernadsky University, Academician Vernadsky Ave. 4, 95-007, Simferopol, Ukraine
• Crimean Scientific Centre of NAS and MES, Academician Vernadsky Ave. 2, 95-007, Simferopol, Ukraine

autor

Shevchenko A

• Taurida National Vernadsky University, Academician Vernadsky Ave. 4, 95-007, Simferopol, Ukraine

autor

Bahov V

• Taurida National Vernadsky University, Academician Vernadsky Ave. 4, 95-007, Simferopol, Ukraine

Bibliografia

• [1] GEHLE J., ZSW develops thin-film efficiency recor, Sun and Wind Energy, Issue 11–12/2013, p. 14
• [2] BABIKER S.G., YONG SHUAI, SID-AHMED M.O., MING XIE, MINGHUA LIU, Enhancement of optical absorption in an amorphous silicon solar cell with periodic grating structure, International Journal of Energy, Information and Communications 3(4), 2012, pp. 9–20.
• [3] CODY G.D., TIEDJE T., ABELES B., MOUSTAKAS T.D., BROOKS B., GOLDSTEIN Y., Disorder and the optical absorption edge of hydrogenated amorphous silicon, Journal de Physique Colloques 42(C4), 1981, p. C4-301.
• [4] WÓJCIK A., KOPALKO K., GODLEWSKI M., ŁUSAKOWSKA E., GUZIEWICZ E., MINIKAYEV R., PASZKOWICZ W., ŚWIĄTEK K., KLEPKA M., JAKIEŁA R., KIECANA M., SAWICKI M., DYBKO K., PHILLIPS M.R., Thin films of ZnO and ZnMnO by atomic layer epitaxy, Optica Applicata 35(3), 2005, pp. 413–417.
• [5] SHEN S.C., CARDONA M., Infrared and far infrared absorption of B- and P-doped amorphous Si, Journal de Physique Colloques 42(C4), 1981, p. C4-349.
• [6] SIDHU L.S., KOSTESKI T., ZUKOTYNSKI S., KHERANI N.P., Infrared vibration spectra of hydrogenated, deuterated, and tritiated amorphous silicon, Journal of Applied Physics 85(5), 1999, pp. 2574–2578.
• [7] SIBIŃSKI M., JAKUBOWSKA M., ZNAJDEK K., SŁOMA M., GUZOWSKI B., Carbon nanotube transparent conductive layers for solar cells applications, Optica Applicata 41(2), 2011, pp. 375–381.
• [8] MANASREH O., Semiconductor Heterojunctions and Nanostructures, McGraw-Hill, 2005, p. 556.
• [9] MAZINOV A.S., BAHOV V.A., NAZDERKIN E.A., Localized states of nanodimensional semiconductor structures, 19th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2009, pp. 623–624.
• [10] TANG C.L., Fundamentals of Quantum Mechanics: For Solid State Electronics and Optics, Cambridge University Press, 2005, p. 208.
• [11] KOROLEV F.A., Theoretical Optics: An Introduction, High School, Moscow, 1966, (in Russian).
• [12] JACKSON J.D., Classical Electrodynamics, John Wiley and Sons, NY–London–Sydney, 1962, p. 642.
• [13] BYKOV M., BYKOV A, MAZINOV A., SLIPCHENKO N., Study of the physical processes in the amorphous silicon films at different hydrogen concentrations in plasma, Vesnik of the SumSU, Series “Physics, Mathematics, Mechanics”, No. 1, 2008, pp. 176–180.
• [14] HULL R., Properties of Crystalline Silicon, The Institution of Electrical Engineering, London, 1999, p. 1019.
• [15] WONDRAK W., BETHGE K., SILBER D., Radiation defect distribution in proton-irradiated silicon, Journal of Applied Physics 62(8), 1987, pp. 3464–3466.
• [16] WOLFORD D.J., BERNHOLC J., HALLER E.E., [Eds.], Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures, MRS Symposium Proceedings, 1990.