Structure of AlN films deposited by magnetron sputtering method

• Autorzy: Nowakowska-Langier K. , Chodun R. , Zdunek K. , Minikayev R. , Nietubyć R.

Identyfikatory

DOI

10.1515/msp-2015-0073

• Języki publikacji: EN

Abstrakty

EN

AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system operating in AC mode was used in the experiment. Processes of synthesis were carried out in the atmosphere of a mixture of Ar/N₂. Morphology and phase structure of the AlN films were investigated at different pressures. Structural characterizations were performed by means of SEM and X-ray diffraction methods. Our results show that the use of magnetron sputtering method in a dual magnetron sputtering system is an effective way to produce AlN layers which are characterized by a good adhesion to the silicon substrate. The morphology of the films is strongly dependent on the Ar/N₂ gas mixture pressure. An increase of the mixture pressure is accompanied by a columnar growth of the layers. The films obtained at the pressure below 1 Pa are characterized by finer and compacter structure. The AlN films are characterized by a polycrystalline hexagonal (wurtzite) structure in which the crystallographic orientation depends on the gas mixture pressure.

Słowa kluczowe

EN

AlN films; magnetron sputtering method; crystalline structure

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2015
• Tom: Vol. 33, No. 3
• Strony: 639--643
• Opis fizyczny: Bibliogr. 26 poz., rys., tab.

Twórcy

autor

Nowakowska-Langier K.

• Department of Material Physics, National Centre for Nuclear Research (NCBJ), Andrzeja Soltana 7, 05-400 Otwock-Swierk, Poland

autor

Chodun R.

• Faculty of Materials Science and Engineering, Warsaw University of Technology, Woloska 141, 02-507 Warsaw, Poland

autor

Zdunek K.

• Faculty of Materials Science and Engineering, Warsaw University of Technology, Woloska 141, 02-507 Warsaw, Poland

autor

Minikayev R.

• Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668, Warsaw, Poland

autor

Nietubyć R.

• Department of Material Physics, National Centre for Nuclear Research (NCBJ), Andrzeja Soltana 7, 05-400 Otwock-Swierk, Poland

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