Structural and optical characteristics of SnS thin film prepared by SILAR

• Autorzy: Mukherjee A. , Mitra P.

Identyfikatory

DOI

10.1515/msp-2015-0118

• Języki publikacji: EN

Abstrakty

EN

SnS thin films were grown on glass substrates by a simple route named successive ion layer adsorption and reaction (SILAR) method. The films were prepared using tin chloride as tin (Sn) source and ammonium sulfide as sulphur (S) source. The structural, optical and morphological study was done using XRD, FESEM, FT-IR and UV-Vis spectrophotometer. XRD measurement confirmed the presence of orthorhombic phase. Particle size estimated from XRD was about 45 nm which fitted well with the FESEM measurement. The value of band gap was about 1.63 eV indicating that SnS can be used as an important material for thin film solar cells. The surface morphology showed a smooth, homogenous film over the substrate. Characteristic stretching vibration mode of SnS was observed in the absorption band of FT-IR spectrum. The electrical activation energy was about 0.306 eV.

Słowa kluczowe

EN

SnS; SILAR; thin films; FESEM; FTIR

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2015
• Tom: Vol. 33, No. 4
• Strony: 847--851
• Opis fizyczny: Bibliogr. 19 poz., rys.

Twórcy

autor

Mukherjee A.

• Dept. of Physics, The University of Burdwan, Golapbag, Burdwan-713104, India

autor

Mitra P.

• Dept. of Physics, The University of Burdwan, Golapbag, Burdwan-713104, India

Bibliografia

• [1] Mariappan R., Ragavendar M., Ponnuswamy V., Opt. Appl., 41 (4) (2011), 989.
• [2] Yue G.H., Wang W., Wang L.S., Wang X., Yan P.X., Chen Y., Peng D.L., J. Alloy. Compd., 474 (2009), 445.
• [3] Guneri E., Gode F., Ulutas C., Kirmizigul F., Altindemir G., Gumus C., Chalcogenide Lett., 7 (2010), 685.
• [4] Gao C., Sehn H., Sun L., Appl. Surf. Sci., 257 (2011), 6750.
• [5] Sohila S., Rajalakshmi M., Ghosh C., J. Alloy. Compd., 509 (2011), 5843.
• [6] Reddy K.T.R., Reddy N.K., Miles R.W., Sol. Energ. Mat. Sol. C, 90 (2006), 3041.
• [7] Loferski J.J., J. Appl. Phys., 27 (1956), 777.
• [8] Prasert S., Jaeyeong H., Wontae N., Adam S.H., Roy G.G., http://nrs.harvard.edu/urn-3:HUL.InstRepos:5366599.
• [9] Sankapal B.R., Mane R.S., Lokhande C.D., Mater. Res. Bull., 35 (2000), 2027.
• [10] Nicolau Y.F., Dupuy M., Brunel M., J. Electrochem. Soc., 137 (1990), 2915.
• [11] Lutterotti L., Matthies S., Wenk H.R., ICOTOM-12, 1 (1999), 1599.
• [12] Rasband W.S., ImageJ, U.S. National Institutes of Health, Bethesda, Maryland, USA, http://imagej.nih.gov/ij/, 1997 – 2014.
• [13] Tauc. J., Mater. Res. Bull., 5 (1970), 721.
• [14] Henry J., Mohanraj K., Kannan S., Barathan S., Sivakumar G., J. Exp. Nanosci., 8 (2013) 12.
• [15] Khel L.K., Khan S., Zaman M.I., J. Chem. Soc. Pak., 27 (2005), 24.
• [16] Kamalasanan M.N., Chandra S., Thin Solid Films, 288 (1966), 112.
• [17] Pakdel A., Ghodsi F.E., Pramana-J. Phys., 76 (2011), 973.
• [18] Xu Y., Salim N.A., Tilley R.D., Nanomaterials-Basel, 2 (2012), 54.
• [19] Ghosh B., Das M., Banerjee P., Das S., Appl. Surf. Sci. 254 (2008), 6436.