Voltage-tunable dual-colour quantum Bragg mirror detector (QBMD)

• Autorzy: Penello Germano M. , Pereira Pedro H. , Sousa Vitor B. , Kawabata Rudy M. S. , Pires Mauricio P. , Souza Patricia L.

Identyfikatory

DOI

10.24425/opelre.2023.144559

• Konferencja: Quantum Structure Infrared Photodetectors - QSIP : International Conference 2020/2022 (11 ; 2022 ; Kraków, Poland)
• Języki publikacji: EN

Abstrakty

EN

The electronic quasi-bound state in the continuum concept is explored in an InGaAs/InAlAs heterostructure to create a voltage-tunable dual-colour quantum Bragg mirror detector. This heterostructure is based on one main quantum well embedded between two different superlattices. By bandgap engineering, each superlattice gives rise to quasi-bound states in the continuum with a preferential direction for electron extraction. Due to these states, the photovoltaic photocurrent presents a dual-colour response, one in a positive direction at 340 meV (3.6 µm), and one in a negative direction at 430 meV (2.9 µm). The simultaneous dual-colour detection can be switched to a single-colour detection (340 meV or 430 meV) by applying a bias voltage. At 77 K, the specific detectivity for simultaneous dual-colour is 2.5·10⁸ Jones, while the single-colour detectivities are 2.6·10⁹ Jones at +2.0 V and 7.7·10⁸ Jones at -1.6 V for 340 meV and 430 meV, respectively.

Słowa kluczowe

EN

bound states in the continuum; intersubband transition; infrared detector; quantum Bragg mirror and dual-colour detection

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2023
• Tom: Vol. 31, Special Issue
• Strony: art. no. e144559
• Opis fizyczny: Bibliogr. 25 poz., rys., wykr.

Twórcy

autor

Penello Germano M.

• Instituto de Física, Universidade Federal do Rio de Janeiro, R. Athos Silveira Ramos 149, Rio de Janeiro 21941-909, Brasil
• DISSE, Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semiconductores, R. Marquês de São Vicente 225, Gávea, Rio de Janeiro, 22451-900, Brasil

• https://orcid.org/0000-0001-9067-6407

autor

Pereira Pedro H.

• LabSem/CETUC, Pontifícia Universidade Católica do Rio de Janeiro, R. Marquês de São Vicente 124, Gávea, Rio de Janeiro 22451-040, Brasil
• DISSE, Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semiconductores, R. Marquês de São Vicente 225, Gávea, Rio de Janeiro, 22451-900, Brasil

• https://orcid.org/0000-0002-1861-847X

autor

Sousa Vitor B.

• LabSem/CETUC, Pontifícia Universidade Católica do Rio de Janeiro, R. Marquês de São Vicente 124, Gávea, Rio de Janeiro 22451-040, Brasil
• DISSE, Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semiconductores, R. Marquês de São Vicente 225, Gávea, Rio de Janeiro, 22451-900, Brasil

autor

Kawabata Rudy M. S.

• LabSem/CETUC, Pontifícia Universidade Católica do Rio de Janeiro, R. Marquês de São Vicente 124, Gávea, Rio de Janeiro 22451-040, Brasil
• DISSE, Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semiconductores, R. Marquês de São Vicente 225, Gávea, Rio de Janeiro, 22451-900, Brasil

autor

Pires Mauricio P.

• Instituto de Física, Universidade Federal do Rio de Janeiro, R. Athos Silveira Ramos 149, Rio de Janeiro 21941-909, Brasil
• DISSE, Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semiconductores, R. Marquês de São Vicente 225, Gávea, Rio de Janeiro, 22451-900, Brasil

autor

Souza Patricia L.

• LabSem/CETUC, Pontifícia Universidade Católica do Rio de Janeiro, R. Marquês de São Vicente 124, Gávea, Rio de Janeiro 22451-040, Brasil
• DISSE, Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semiconductores, R. Marquês de São Vicente 225, Gávea, Rio de Janeiro, 22451-900, Brasil

Bibliografia

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Uwagi

Opracowanie rekordu ze środków MEiN, umowa nr SONP/SP/546092/2022 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2022-2023).