Characterization of the native oxide on CdTe surfaces

• Autorzy: Sobola Dinara , Kaspar Pavel , Nebojsa Alois , Hemzal Dušan , Grmela Lubomír , Smith Steve

Identyfikatory

DOI

10.2478/msp-2019-0030

• Języki publikacji: EN

Abstrakty

EN

This study focuses on the description of oxidation of CdTe monocrystal surfaces after selective chemical etching. Measurements of surface morphology of the oxides occurring in short time are valuable for deeper understanding of the material degradation and fabrication of reliable devices with enhanced performance. The samples with (1 1 1) orientation were selectively etched and cleaned of oxide. Exposure of the oxide-free surfaces of CdTe to air at normal atmospheric conditions over 24 hours leads to an appearance of characteristic surface features. The oxidized surfaces were investigated by scanning electron microscopy, scanning probe microscopy, Raman spectroscopy and ellipsometry. The results indicate clear differences in the oxidation of Cd-terminated and Te-terminated surfaces.

Słowa kluczowe

EN

selective etching; scanning probe microscopy; ellipsometry; Raman spectroscopy

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2019
• Tom: Vol. 37, No. 2
• Strony: 206--211
• Opis fizyczny: Bibliogr. 23 poz., rys.

Twórcy

autor

Sobola Dinara

• Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno, Czech Republic
• Central European Institute of Technology BUT, Purkynova 123, 612 00 Brno, Czech Republic

autor

Kaspar Pavel

• Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno, Czech Republic

autor

Nebojsa Alois

• Central European Institute of Technology BUT, Purkynova 123, 612 00 Brno, Czech Republic

autor

Hemzal Dušan

• Department of Condensed Matter Physics, Faculty of Science, Masaryk University, Kotlarska 2, 611 37 Brno, Czech Republic

autor

Grmela Lubomír

• Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno, Czech Republic
• Central European Institute of Technology BUT, Purkynova 123, 612 00 Brno, Czech Republic

autor

Smith Steve

• South Dakota School of Mines, EP220, Electrical Engineering and Physics, 501 East St. Joseph Street Rapid City, 57701 South Dakota, USA

Bibliografia

• [1] Ogawa K., Muraishi M., IEEE T. Nucl. Sci., 57 (2010), 17.
• [2] Dallaeva D., Ramazanov SH., Prokopzeva E., Tomanek P., Grmela L., Proc. SPIE 9442, (2015), UNSP 944208.
• [3] Skarvada P., Macku R., Dallaeva D., Sedlak P., Grmela L., Tomanek P., Proc. SPIE, 9450 (2015), 94501M.
• [4] Ramazanov SH., Talu S., Sobola D., Stach S., Ramazanov G., Superlattice. Microst., 86 (2015), 395.
• [5] Ţălu Ş., Papež N., Sobola D., Achour A., Solaymani S., J. Mater. Sci. Mater. El., 15 (2017), 15370.
• [6] Amézaga A., Holmström E., Lizárraga R., Menéndez-Proupin E., Bartolo-Pérez P., Giannozzi P., Phys. Rev. B, 81 (2010).
• [7] Zázvorka J., Franc J., Statelov M., Pekárek J., Veis M., Moravec P., Mašek K., Surf. Sci., 389 (2016), 1214.
• [8] Korovyanko O.O., Shcherbak L.P., Nakonechnyi I.Y., Zakharuk Z.I., Fochuk P.M., Bolotnikov A.E., James R.B., J. Cryst. Growth, 475 (2017), 26.
• [9] Cohen-Taguri G., Levinshtein M., Ruzin A., Goldfarb I., Surf. Sci., 602 (2008), 712.
• [10] Sobola D., Talu S., Sadovsky P., Papez N., Grmela L., Adv. Electr. Electron. Eng., 15 (2017).
• [11] Knápek A., Sobola D., Tománek P., Pokorná Z., Urbánek M., Appl. Surf. Sci., 395 (2017), 157.
• [12] Papez N., Škvarenina L., Tofel P., Sobola D., Proc. SPIE, (2017).
• [13] Knápek A., Sýkora J., Chlumská J., Sobola D., Microelectron. Eng., 173 (2017).
• [14] Dallaeva D., Talu S., Stach S., Skarvada P., Tomanek P., Grmela L., Appl. Surf. Sci., (2014) 81.
• [15] Stach S., Dallaeva D., Talu S., Kaspar P., Tomanek P., Giovanzana S., Grmela L., Mater. Sci.-Poland, 33 (2015), 175.
• [16] Hawkins S. A., Villa-Aleman E., Duff M.C., Hunter D.B., Burger A., Groza M., Buliga V., Black D.R., J. Electron. Mater., 37 (2008), 1438.
• [17] Zázvorka J., Franc J., Beran L., Moravec P., Pekárek J., Veis M., Sci. Technol. Adv. Mater., 17 (2016), 792.
• [18] George M.A., Collins W.E., Chen K.T., Hu Z., Egarievwe S.U., Zheng Y., Burger A., J. Appl. Phys., 77 (1995), 3134.
• [19] Talu S., Stępień K., Caglayan M. O., Microsc. Res. Tech., 78 (2015), 1026.
• [20] Méndez A., Reyes Y., Trejo G., Stępień K., Ţălu Ş., Microsc. Res. Tech., 78 (2015), 1082.
• [21] Sobola D., Talu S., Solaymani S., Grmela L., Microsc. Res. Tech., 80 (2017), 1328.
• [22] Garczyk Z., Stach S., Talu S., Sobola D., Wrobel Z., JBBBE, 31 (2017), 1.
• [23] Knapek A., Sykora J., Chlumska J., Sobola D., Microelectron. Eng. 173 (2017), 42.

Uwagi

PL

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).