Optimization of MBE-grown GaSb buffer on GaAs substrates for infrared detectors

• Autorzy: Jarosz Dawid , Bobko Ewa , Trzyna-Sowa Małgorzata , Przeździecka Ewa , Stachowicz Marcin , Ruszała Marta , Krzemiński Piotr , Juś Anna , Maś Kinga , Wojnarowska-Nowak Renata , Nowak Oskar , Gudyka Daria , Tabor Brajan , Marchewka Michał

Identyfikatory

DOI

10.24425/opelre.2024.152620

• Języki publikacji: EN

Abstrakty

EN

The aim of this work was to improve the quality of the GaSb buffer layers on GaAs substrates using the molecular beam epitaxy (MBE) technology. The high quality of the GaSb buffer layers is one of the most important elements enabling the synthesis of good quality of type- II superlattices (T2SL) structures for infrared applications. The main challenges in this regard are: compensation of the difference in lattice constants between GaAs and GaSb and obtaining the highest achievable surface quality of the final GaSb layer. In the literature, many authors describe different techniques to obtain the best quality of a GaSb buffer layer. In this work, we present the results of HRXRD, AFM, TOF-SIMS, SEM, and Nomarski optical microscope measurements obtained for 2 μm thick GaSb buffer layers. The GaSb layers are made according to different techniques and these results are compared with a GaSb buffer construction technique according to our own technology. During the processes, we also obtained an unintentional structure of one of the buffer layers, which allowed us to obtain very good results in terms of surface structure and crystallographic quality where FWHM in 𝜔𝑅𝐶 scan was equal to 138 arcsec and RMS 0.20 nm proving that there is still a lot of work to be done in this area.

Słowa kluczowe

EN

gallium arsenide; gallium antimonide; molecular beam epitaxy; heteroepitaxy

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2024
• Tom: Vol. 32, No. 4
• Strony: art. no. e152620
• Opis fizyczny: Bibliogr. 24 poz., rys., tab., wykr.

Twórcy

autor

Jarosz Dawid

• Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland

• https://orcid.org/0000-0001-8162-8016

autor

Bobko Ewa

• Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland

• https://orcid.org/0000-0002-4235-8698

autor

Trzyna-Sowa Małgorzata

• Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland

• https://orcid.org/0000-0002-6546-9382

autor

Przeździecka Ewa

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

• https://orcid.org/0000-0003-0385-3124

autor

Stachowicz Marcin

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

• https://orcid.org/0000-0003-3242-111X

autor

Ruszała Marta

• Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland

• https://orcid.org/0000-0001-8963-3936

autor

Krzemiński Piotr

• Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland

• https://orcid.org/0000-0002-8931-2494

autor

Juś Anna

• Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland

• https://orcid.org/0000-0001-6584-8182

autor

Maś Kinga

• Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland

• https://orcid.org/0000-0002-2981-3393

autor

Wojnarowska-Nowak Renata

• Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland

• https://orcid.org/0000-0003-2550-227X

autor

Nowak Oskar

• Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland

autor

Gudyka Daria

• Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland

autor

Tabor Brajan

• Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland

autor

Marchewka Michał

• Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland

• https://orcid.org/0000-0002-5861-5476

Bibliografia

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Uwagi

This research was funded under projects no. POIR.04.01.04-00-0123/17 and no. SKN/SP/601031/2024.