Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes

Zhou, Q.; Xu, M.; Wang, H.

doi:10.1515/oere-2016-0004

Artykuł - szczegóły

Tytuł artykułu

Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes

Autorzy

Zhou Q. , Xu M. , Wang H.

Wybrane pełne teksty z tego czasopisma

http://journals.pan.pl/dlibra/journal/opelre

Identyfikatory

DOI

10.1515/oere-2016-0004

Warianty tytułu

Języki publikacji

Abstrakty

In recent years, GaN-based light-emitting diode (LED) has been widely used in various applications, such as RGB lighting system, full-colour display and visible-light communication. However, the internal quantum efficiency (IQE) of green LEDs is significantly lower than that of other visible spectrum LED. This phenomenon is called “green gap”. This paper briefly describes the physical mechanism of the low IQE for InGaN/GaN multiple quantum well (MQW) green LED at first. The IQE of green LED is limited by the defects and the internal electric field in MQW. Subsequently, we discuss the recent progress in improving the IQE of green LED in detail. These strategies can be divided into two categories. Some of these methods were proposed to enhance crystal quality of InGaN/GaN MQW with high In composition and low density of defects by modifying the growth conditions. Other methods focused on increasing electron-hole wave function overlap by eliminating the polarization effect.

Słowa kluczowe

green LED internal quantum efficiency crystal quality wave function overlap

Wydawca

Stowarzyszenie Elektryków Polskich
Polska Akademia Nauk
Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego

Czasopismo

Opto-Electronics Review

Rocznik

2016

Tom

Vol. 24, No. 1

Strony

1--9

Opis fizyczny

Bibliogr. 57 poz., il., wykr.

Twórcy

autor

Zhou Q.

Engineering Research Centre for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou, Guangdong 510640, China

autor

Xu M.

phmshxu@scut.edu.cn

Engineering Research Centre for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou, Guangdong 510640, China

autor

Wang H.

Engineering Research Centre for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou, Guangdong 510640, China

Bibliografia

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Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.

Typ dokumentu

Bibliografia

Identyfikator YADDA

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