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Wybrane pełne teksty z tego czasopisma
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Języki publikacji
Abstrakty
Microstructural, optical and electrical properties of Cl-doped CdTe crystals grown by the low pressure Bridgman (LPB) method were investigated for four different doping concentrations (unintentionally doped, 4.97 × 1019 cm-3, 9.94 × 1019 cm-3 and 1.99 × 1020 cm-3) and three different locations within the ingots (namely, samples from top, middle and bottom positions in the order of the distance from the tip of the ingot). It was shown that Cl dopant suppressed the unwanted secondary (5 1 1) crystalline orientation. Also, the average size and surface coverage of Te inclusions decreased with an increase in Cl doping concentration. Spectroscopic ellipsometry measurements showed that the optical quality of the Cl-doped CdTe single crystals was enhanced. The resistivity of the CdTe sample doped with Cl at the 1.99 × 1020 cm-3was above 1010cm.
Słowa kluczowe
Wydawca
Czasopismo
Rocznik
Tom
Strony
487--493
Opis fizyczny
Bibliogr. 20 poz., rys., tab.
Twórcy
autor
- WCU Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea
autor
- Korea Atomic Energy Research Institute, Jeongeup, Republic of Korea
autor
- Korea Atomic Energy Research Institute, Jeongeup, Republic of Korea
autor
- Korea Atomic Energy Research Institute, Jeongeup, Republic of Korea
autor
- Korea Atomic Energy Research Institute, Jeongeup, Republic of Korea
autor
- College of Information and Communication Engineering, Sungkyunkwan University, Suwon, Republic of Korea
autor
- Korea Atomic Energy Research Institute, Jeongeup, Republic of Korea
Bibliografia
- [1] AUDET N.,GUSKOV V.N.,GREENBERG J.H., J.Electron.Mater.,34(2005),687.
- [2] SHIRAKI H.,FUNAKI M.,ANDO Y.,TACHIBANA A., KOMINAMI S.,OHNO R., IEEET.Nucl.Sci.,56(2009), 1717.
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- [4] MEYER B.K.,HOFMANN D.M.,STADLER W., SALK M.,EICHE C.,BENZ K.W., Proceedings of the MRSSpringMeeting,SanFrancisco,1993.
- [5] WEIGEL E.,MIILLER-VOGT G.,STEINBACH B., WENDL W.,STADLER W.,HOFMANN D.M.,MEYER B.K., Mater.Sci.Eng.B-Adv.,16(1993),17.
- [6] KORBUTYAK D.V.,KRYLYUK S.G.,TKACHUK P.M., TKACHUK V.I.,KORBUTJAK N.D.,RARANSKY M.D., J.Cryst.Growth,197(1999),662.
- [7] FIEDERLE M.,BABENTSOV V.,FRANC J., FAULER A.,KONRATH J.-P., Cryst.Res.Technol.,38 (2003),588.
- [8] MATVEEV O.A.,TERENTEV A.I., Semiconductors,34 (2000),1264.
- [9] POPOVYCH V.D.,VIRT I.S.,SIZOV F.F.,TETYORKIN V.V.,TSYBRII(IVASIV)Z.F.,DARCHUK L.O.,PAR- FENJUK O.A.,ILASHCHUK M.I., J.Cryst.Growth,308 (2007),63.
- [10] SOCHINSKII N.V.,LOZANO M.,PELLEGRINI G.,ULLAN M., Nucl.Instrum.Meth.A,568(2006),451.
- [11] FUNAKI M.,OZAKI T.,SATOH K.,OHNO R., Nucl. Instrum.Meth.A,436(1999),120.
- [12] BOLOTNIKOV A.E.,CAMARDA G.S.,CARINI G.A., CUI Y.,KOHMAN K.T.,LI L.,SALOMON M.B., JAMES R.B., IEEET.Nucl.Sci.,54(2007),821.
- [13] SZELES C.,CAMERON S.E.,SOLDNER S.A.,NDAP J.-O.,REED M.D., J.Electron.Mater.,33(2004),742.
- [14] JAYATIRTHA H.N.,HENDERSON D.O.,BURGER A., VOLZ M.P., Appl.Phys.Lett.,62(1993),573.
- [15] OH J.-H.,KIM K.-K.,SEONG T.-Y., Appl.Surf.Sci., 257(2011),2731.
- [16] MASNADI-SHIRAZI M.,LEWIS R.B.,BAHRAMIYEKTA V.,TIEDJE T.,CHICOINE M.,SERVATI P., J. Appl.Phys.,116(2014),223506.
- [17] LAUTENSCHLAGER P.,GARRIGA M.,LOGOTHETIDIS S.,CARDONA M., Phys.Rev.B,35(1987),9174.
- [18] ARWIN H.,ASPNES D.E., J.Vac.Sci.Technol.A,2 (1984),1316.
- [19] SHIN H.-Y.,SUN C.-Y., J.Cryst.Growth,186(1998), 67.
- [20] VAN DYK E.E.,MEYER E.L., Renew.Energ.,29 (2004),333.
Uwagi
Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-072a2ccd-b476-4681-a19d-5885e52d1a43