Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes

• Autorzy: Bisewski D. , Myśliwiec M. , Górecki K. , Kisiel R. , Zarębski J.

Identyfikatory

DOI

10.1515/mms-2016-0033

• Języki publikacji: EN

Abstrakty

EN

This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.

Słowa kluczowe

EN

Schottky diodes; transient thermal impedance; thermal measurements; silicon carbide; packaging

• Wydawca: Komitet Metrologii i Aparatury Naukowej PAN
• Czasopismo: Metrology and Measurement Systems
• Rocznik: 2016
• Tom: Vol. 23, nr 3
• Strony: 451--459
• Opis fizyczny: Bibliogr. 21 poz., fot., rys., wykr., wzory

Twórcy

autor

Bisewski D.

• Gdynia Maritime University, Faculty of Electrical Engineering, Morska 83, 81-225 Gdynia, Poland

autor

Myśliwiec M.

• Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Nowowiejska 15/19, 00-665 Warsaw, Poland

autor

Górecki K.

• Gdynia Maritime University, Faculty of Electrical Engineering, Morska 83, 81-225 Gdynia, Poland

autor

Kisiel R.

• Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Nowowiejska 15/19, 00-665 Warsaw, Poland

autor

Zarębski J.

• Gdynia Maritime University, Faculty of Electrical Engineering, Morska 83, 81-225 Gdynia, Poland

Bibliografia

• [1] Buttay, C., Raynaud, Ch., Morel, H. (2012). Thermal Stability of Silicon Carbide Power devices. IEEE Transactions on Electron Devices, 59(3), 761-769.
• [2] Buttay, C., Raynaud, Ch., Morel, H., Lazar, M., Civrac, G. (2011). High-Temperature Behavior of SiC Power Devices. Proc. of 14th European Conference on Power Electronics and Applications EPE2011, 1-9.
• [3] Kisiel, R., Guziewicz, M., Szczepański, Z., Król, K. (2010). An Overview of Materials and Bonding Techniques for Inner Connections in SiC High Power and High Temperature Devices. Proc. of ISSE 2010, Warszawa, Poland, 128-130.
• [4] Alexakis, P., Alatise, O., Hu, J., Jahdi, S., Ran, L., Mawby, P.A. (2014). Improved electrothermal ruggedness in Sic mosfets compared with silicon IGBTS. IEEE Transactions on Electron Devices, 61(7), 2278-2286.
• [5] 5th Generation thinQ!TM SiC Schottky Diode IDL02G65C5. Data Sheet, Infineon Technologies, 2013.
• [6] APT10SCD120BCT. Data Sheet, Microsemi Power Products Group, 2012.
• [7] C3D1P7060Q Silicon Carbide Schottky diode Z-REC Rectifier. Cree Inc., 2015.
• [8] Górecki, K., Zarębski, J. (2014). Modeling the influence of selected factors on thermal resistance of semiconductor devices. IEEE Transactions on Components, Packaging and Manufacturing Technology, 4(3), 421-428.
• [9] Blackburn, D.L. (2004). Temperature Measurements of Semiconductor Devices - A Review. 20th IEEE Semicon. Thermal Measur. and Menagement Symp. SEMI-THERM, San Jose, 70-80.
• [10] Starzak, Ł., Zubert, M., Janicki, M., Torzewicz, T., Napieralska, M., Jabłoński, G., Napieralski, A. (2013). Behavioral approach to SiC MPS diode electrothermal model generation. IEEE Transactions on Electron Devices, 60(2), 630-638.
• [11] Blackburn, D.L., Oettinger, F.F. (1976). Transient Thermal Response Measurements of Power Transistors. IEEE Transactions on Industrial Electronics and Control Instrum., IECI-22(2), 134-141.
• [12] Górecki, K., Górecki, P. (2015). The analysis of accuracy of the selected methods of measuring thermal resistance of IGBTs. Metrol. Meas. Syst., 22(3), 455-464.
• [13] Oettinger, F.F., Blackburn, D.L. (1990). Semiconductor Measurement Technology: Thermal Resistance Measurements, U. S. Department of Commerce. NIST/SP-400/86.
• [14] Górecki, K., Zarębski, J. (2014). The influence of the selected factors on transient thermal impedance of semiconductor devices. Proc. of the 21st International Conference Mixed Design of Integrated Circuits and Systems MIXDES, Lublin, 309-314.
• [15] Górecki, K., Zarębski, J. (2014). The semiconductor device thermal model taking into account non-linearity and multhipathing of the cooling system. Journal of Physics: Conference Series, 494, 012008, DOI:10.1088/1742-6596/494/1/012008.
• [16] Myśliwiec, M., Kisiel, R., Guziewicz, M. (2015). Materials and technological aspects of high-temperature SiC device packages Reliability. Microelectronics International, 32(3), 143-148.
• [17] Székely, V. (1998). Thermal Testing and Control by Means of Built-in Temperature Sensors. Electronics Cooling, 4(3), 36-39.
• [18] Szekely, V. (1997). A New Evaluation Method of Thermal Transient Measurement Results. Microelectronic Journal, 28(3), 277-292.
• [19] Górecki, K., Rogalska, M., Zarębski, J. (2014). Parameter estimation of the electrothermal model of the ferromagnetic core. Microelectronics Reliability, 54(5), 978-984.
• [20] Górecki, K., Zarębski, J., Bisewski, D. (2015). An influence of the selected factors on the transient thermal impedance model of power MOSFET. Informacije MIDEM - Journal of Microelectronics, Electronic Components and Materials, 45(2), 110-116.
• [21] Zarębski, J., Górecki, K. (2008). A Method of the Thermal Resistance Measurements of Semiconductor Devices with P-N Junction. Measurement, 41(3), 259-265.

Uwagi

PL

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).