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Thermal analysis of a two-dimensional array with surface light emission based on nitride EEL lasers

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Języki publikacji
EN
Abstrakty
EN
This paper presents the results of a thermal computational analysis of a two-dimensional laser array emitting from a surface. The array consisted of eight equispaced ridge-waveguide edge-emitting nitride diode lasers. Surface emission of light was obtained using mirrors inclined at 45°. The authors investigate how the geometrical dimensions of the array emitters and their pitch in the array affect the increase and distribution of temperature in the device. They also examine the influence on the temperature increase and distribution of the thickness of the insulating SiO₂, the thickness of the gold layer forming the top contact of the laser, and the thickness of the GaN substrate, as well as the influence of the ridge-waveguide width.
Rocznik
Strony
art. no. e144115
Opis fizyczny
Bibliogr. 21 poz., rys., wykr., tab.
Twórcy
  • Institute of Physics, Lodz University of Technology, 217/221 Wólczańska St., 93-005 Łódź, Poland
  • Institute of Physics, Lodz University of Technology, 217/221 Wólczańska St., 93-005 Łódź, Poland
  • Institute of Physics, Lodz University of Technology, 217/221 Wólczańska St., 93-005 Łódź, Poland
autor
  • Institute of High Pressure Physics, Polish Academy of Sciences, 29/37 Sokołowska St., 01-142 Warsaw, Poland
autor
  • Institute of High Pressure Physics, Polish Academy of Sciences, 29/37 Sokołowska St., 01-142 Warsaw, Poland
autor
  • Institute of High Pressure Physics, Polish Academy of Sciences, 29/37 Sokołowska St., 01-142 Warsaw, Poland
Bibliografia
  • [1] Warren, M. E. et al. High-speed and scalable high-power VCSEL arrays and their applications. Proc. SPIE 9381, (2015). https://doi.org/10.1117/12.2080235
  • [2] Huang, C. Y. Challenges and advancement of blue III-Nitride vertical-cavity surface-emitting lasers. Micromachines 12, 676 (2021). https://doi.org/10.3390/mi12060676
  • [3] Kuramoto, M. et al. High-power GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors. Appl. Sci. 9, 416 (2019). https://doi.org/10.3390/app9030416
  • [4] Kuramoto, M. et al.Watt-class blue vertical-cavity surface-emitting laser arrays. Appl. Phys. Express 12, 091004 (2019). https://doi.org/10.7567/1882-0786/ab3aa6
  • [5] Liu, J. et al. GaN-based blue laser diodes with 2.2 W of light output power under continuous-wave operation. IEEE Photon. Technol. Lett. 29, 2203-2206 (2017). https://doi.org/10.1109/LPT.2017.2770169
  • [6] Perlin, P. et al. InGaN laser diode mini-arrays. Appl. Phys. Express 4, 062103 (2011). https://doi.org/10.1143/apex.4.062103
  • [7] Springthorpe, A. J. A novel double-heterostructure p-n junction laser. Appl. Phys. Lett. 31, 524 (1977). https://doi.org/10.1063/1.89762
  • [8] Donnelly, J. P., Rauschenbach, K., Wang, C. A., Goodhue, W. D. & Bailey, R. J. Two-dimensional surface-emitting arrays of GaAs/AlgaAs diode lasers. Proc. SPIE 1043, Laser Diode Technology and Applications (1989). https://doi.org/10.1117/12.976359
  • [9] Kim, J. H., Lang, R. J. & Larsson A. High‐power AlGaAs/GaAs single quantum well surface-emitting lasers with integrated 45° beam deflectors. Appl. Phys. Lett. 57, 2048-2050 (1990). https://doi.org/10.1063/1.103937
  • [10] Śpiewak, P. et al. Impact of thermal crosstalk between emitters on power roll-over in nitride-based blue-violet laser bars. Semicond. Sci. Technol. 32, 025008 (2017). https://doi.org/10.1088/1361-6641/aa513b
  • [11] Shackelford, J. F. & Alexander, W. CRC Materials Science and Engineering Handbook, Third Edition. (CRC Press, 2001). https://doi.org/10.1201/9781420038408
  • [12] Lide, D. R. CRC handbook of chemistry and physics: a ready-reference of chemical and physical data, 85th edition. J. Am. Chem. Soc. 127, 4542 (2004). https://doi.org/10.1021/ja041017a
  • [13] Kuc, M. & Sarzała, R. P. Modelowanie zjawisk fizycznych w krawędziowych laserach azotkowych oraz ich matrycach. (Wydawnictwo Politechniki Łódzkiej, 2016). [in Polish]
  • [14] Nakwaski, W. Thermal conductivity of binary, ternary, and quaternary III–V compounds. J. Appl/ Phys. 64, 159-166 (1988). https://doi.org/10.1063/1.341449
  • [15] Sarzała, R. P., Śpiewak, P., Nakwaski, W. & Wasiak, M. Cavity designs for nitride VCSELs with dielectric DBRs operating efficiently at different temperatures. Opt. Laser Technol. 132, 106482 (2020). https://doi.org/10.1016/j.optlastec.2020.106482
  • [16] Karbownik, P. & Sarzała, R. Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers. Opto-Electron. Rev. 16, 27-33 (2008). https://doi.org/10.2478/s11772-007-0035-3
  • [17] Tomczyk, A., Sarzała, R. P., Czyszanowski, T., Wasiak, M. & Nakwaski, W. Fully self-consistent three-dimensional model of edge-emitting nitride diode lasers. Opto-Electron. Rev. 11, 65-75 (2003). https://www.infona.pl/resource/bwmeta1.element.baztech-article-BWA1-0002-0110
  • [18] Chung, D. D. L. Thermal interface materials. J. Mater. Eng. Perform. 10, 56-59 (2001). https://doi.org/10.1361/105994901770345358
  • [19] Khounsary, A. M., Chojnowski, D., Assoufid, L. & Worek, W. M. Thermal contact resistance across a copper-silicon interface. Proc. SPIE 3151, 45-51 (1997). https://doi.org/10.1117/12.294497
  • [20] Wengang, W. B., Haochung, H. K., Peicheng, K. & Shen, B. Handbook of GaN Semiconductor. 1st edition (CRC Press, 2017). https://doi.org/10.1201/9781315152011
  • [21] Adachi, A. Properties of Semiconductor Alloys: Group‐IV, III–V and II–VI Semiconductors. (John Wiley & Sons, Ltd., 2009). https://doi.org/10.1002/9780470744383
Uwagi
POIR.04.04.00-00-4113/17 project is carried out within the TEAM TECH programme of the Foundation for Polish Science co-financed by the European Union under the European Regional Development Fund. This work was completed while the first author was a Doctoral Candidate in the Interdisciplinary Doctoral School at Lodz University of Technology, Poland.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-03ad4d85-c625-417a-aa40-6dd8e6c95a43
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