Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design

• Autorzy: Gomółka E. , Markowska O. , Kopytko M. , Kowalewski A. , Martyniuk P. , Rogalski A. , Rutkowski J. , Motyka M. , Krishna S.

Identyfikatory

DOI

10.24425/123438

• Języki publikacji: EN

Abstrakty

EN

We present an investigation of optical and electrical properties of mid-wavelength infrared (MWIR) detectors based on InAs/GaSb strained layer superlattices (SLs) with nBnN and pBnN design. The temperature-dependent behavior of the bandgap was investigated on the basis of absorption measurements. A 50% cut-off wavelength of around 4.5 μm at 80 K and increase of up to 5.6 μm at 290 K was found. Values of Varshni parameters, zero temperature bandgap E0 and empirical coefficients α and β were extracted. Arrhenius plots of dark currents of nBnN and pBnN detectors were compared with the p-i-n design. Dark current density reduction in nBnN and pBnN detectors is observed in comparison to the p-i-n device. This shows a suppression of Shockley-Read-Hall (SRH) processes by means of introducing barrier architecture.

Słowa kluczowe

EN

InAs/GaSb type-II superlattices; infrared detectors; barrier detectors; nBn detector; p-i-n detector

PL

InAs; GaSb; detektory podczerwieni; detektor bariery; detektor nBn; detektory typu P-I-N

• Wydawca: Polska Akademia Nauk, Wydział IV Nauk Technicznych
• Czasopismo: Bulletin of the Polish Academy of Sciences. Technical Sciences
• Rocznik: 2018
• Tom: Vol. 66, nr 3
• Strony: 317--323
• Opis fizyczny: Bibliogr. 28 poz., rys., wykr., tab.

Twórcy

autor

Gomółka E.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland

autor

Markowska O.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland

autor

Kopytko M.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland

autor

Kowalewski A.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland

autor

Martyniuk P.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland

autor

Rogalski A.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland

autor

Rutkowski J.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland

autor

Motyka M.

• Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Technology, 27 Wybrzeże Wyspiańskiego St., Wrocław, Poland

autor

Krishna S.

• Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210, USA

Bibliografia

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Uwagi

PL

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).