Miniaturized ultraviolet sources driven by dielectric barrier discharge and runaway electron preionized diffuse discharge

• Autorzy: Erofeev M , Baksht E , Tarasenko V

Identyfikatory

DOI

10.5277/oa140311

• Języki publikacji: EN

Abstrakty

EN

In this work we have studied the energy and spectral characteristics of miniaturized dielectric barrier discharge KrCl-, XeCl-, XeBr-, and Xe2-excilamps of various designs as well as short pulse point-like light sources based on runaway electron preionized diffuse discharge. The maximum ultraviolet power density was 20 mW/cm2, which is comparable with the densities of ordinary dielectric barrier discharge excilamps, whereas the maximum efficiencies of the excilamps were not greater than 2.5%. The causes for the low radiation efficiency of the compact dielectric barrier discharge driven excilamps were analyzed. It is found that at an electron concentration of ne > 1014 cm–3, the efficiency decreases due to enhanced quenching of excited atoms or molecules in dissociation by electron impact. The spectral characteristics of a runaway electron preionized diffuse discharge formed between two pointed electrodes in atmospheric pressure air in an inhomogeneous electric field at a gap shorter than 8 mm were investigated. It is shown that the radiation spectrum of the discharge consists of bands of the second positive nitrogen system, and as the discharge transforms to a spark, lines of the electrode material appear in the spectrum. At a gap of 0.5 mm, weak X-rays from the discharge gap were detected.

Słowa kluczowe

EN

excilamps; light sources; plasma spectroscopy; runaway electron preionized diffuse discharge

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2014
• Tom: Vol. 44, nr 3
• Strony: 475--487
• Opis fizyczny: Bibliogr. 29 poz., rys., wykr.

Twórcy

autor

Erofeev M

• Institute of High Current Electronics, Akademichesky Avenue 2/3, 634055 Tomsk, Russia
• National Research Tomsk Polytechnic University, Lenina Avenue 30, 634050 Tomsk, Russia

autor

Baksht E

• Institute of High Current Electronics, Akademichesky Avenue 2/3, 634055 Tomsk, Russia

autor

Tarasenko V

• Institute of High Current Electronics, Akademichesky Avenue 2/3, 634055 Tomsk, Russia
• National Research Tomsk Polytechnic University, Lenina Avenue 30, 634050 Tomsk, Russia

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