Influence of high Al fraction on reactive ion etching of AlGaN/GaN heterostructures

• Autorzy: Gryglewicz J , Stafiniak A , Wosko M , Prazmowska J , Paszkiewicz B
• Języki publikacji: EN

Abstrakty

EN

In this study, the results of reactive ion etching (RIE) process of diversified Al content AlxGa1–xN/AlN/GaN/sapphire heterostructures were presented. The Al fractions of 22, 25, 31 and 36% were examined. An impact of Al content in the heterostructures on the etch rates and surface morphology was investigated. The influence of used Cl2/BCl3/Ar gas mixture with varying of BCl3 flow on the etch rate of Al0.2Ga0.8N/GaN/sapphire, surface morphology and angle of mesa slope, was discussed.

Słowa kluczowe

EN

reactive ione etching; HEMT; AlGaN/GaN heterostructure

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2013
• Tom: Vol. 43, nr 1
• Strony: 27--33
• Opis fizyczny: Bibliogr. 10 poz., rys., tab., wykr.

Twórcy

autor

Gryglewicz J

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Stafiniak A

autor

Wosko M

autor

Prazmowska J

autor

Paszkiewicz B

Bibliografia

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