Influence of molar concentration and temperature on structural, optical, electrical and X-ray sensing properties of chemically grown nickel-bismuth-sulfide (NixBi2−xS3) thin films

• Autorzy: Sabarish R. , Suriyanarayanan N. , Kalita J. M. , Sarma M. P. , Wary G. , Kheraj V. , Deshmukh S. G.

Identyfikatory

DOI

10.2478/msp-2018-0072

• Języki publikacji: EN

Abstrakty

EN

In this report, ternary semiconducting Ni_xBi_2−xS₃(x = 0.2 M and 0.5 M) thin films were synthesized in situ for the first time by a chemical bath deposition technique at different bath temperatures (60 °C, 70 °C and 80 °C). The effects of concentration and deposition temperature on the deposited films were studied by combining the results of structural, morphological, optical and electrical analyses. The growth of Ni_xBi_2−xS₃ films with good crystalline nature and interconnected grain arrangement takes place due to increasing the concentration of Ni²⁺ ions in bismuth sulfide matrix. EDS result confirmed the stoichiometry of Ni_xBi_2−xS₃ formation. Wettability test demonstrated that the surface of the film was hydrophilic in nature. The optical absorption spectra revealed that the bandgap E_g of the x = 0.5 M film deposited at 70 °C was about 1.36 eV. Current-voltage (I-V) characteristics of the x = 0.5 M film deposited at 70 °C were studied under X-ray radiation and dark condition. An X-ray detection sensitivity analysis showed that the detection sensitivity is optimum when the bias voltage applied across the film is low (~0.9 V). These findings reveal that the film with x = 0.5 M deposited at 70 °C can be used as an efficient low cost X-ray sensor.

Słowa kluczowe

EN

chemical bath deposition; X-ray; photoluminescence; ternary compounds; activation energy; sensor

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2018
• Tom: Vol. 36, No. 4
• Strony: 675--684
• Opis fizyczny: Bibliogr. 44 poz., rys., tab.

Twórcy

autor

Sabarish R.

• Department of Physics, Government College of Technology, Coimbatore-641 013, India

autor

Suriyanarayanan N.

• Department of Physics, Government College of Technology, Coimbatore-641 013, India

autor

Kalita J. M.

• Department of Physics, Cotton University, Guwahati-781 001, India

autor

Sarma M. P.

• Department of Physics, Cotton University, Guwahati-781 001, India

autor

Wary G.

• Department of Physics, Cotton University, Guwahati-781 001, India

autor

Kheraj V.

• Department of Applied Physics, Sardar Vallabhbhai National Institute of Technology, Surat-395 007, India

autor

Deshmukh S. G.

• Department of Applied Physics, Sardar Vallabhbhai National Institute of Technology, Surat-395 007, India

Bibliografia

• [1] Vigil-Galan O., Pulgarín F.A., Cruz Gandarilla F., Courel M., Villarreal Ruiz G., Sanchez Y., Jiménez Olarte D., Saucedo E., Mater. Design, 99 (2016), 254.
• [2] Yang M., Zhang T., Schulz P., Li Z., Li G., Kim D.H., Guo N., Berry J.J., Zhu K., Zhao Y., Nat. Commun., 7 (2016), 12305.
• [3] Kaur M., Dadhich B.K., Singh R., Kailasaganapathi, Bagwaiya T., Bhattacharya S., Debnath A.K., Muthe K.P., Gadkari S.C., Sensor. Actuat. A-Phys., 242 (2017), 389.
• [4] Pandit B., Sharma G.K., Sankapal B.R., J. Colloid Interf. Sci., 505 (2017), 1011.
• [5] Li J., Kim S.Y., Nam D., Liu X., Kim J.H., Cheong H., Liu W., Li H., Sun Y., Zhang Y., Sol. Energ. Mat. Sol. C., 159 (2017), 447.
• [6] Medles M., Benramdane N., Bouzidi A., Nakrela A., Tabet-Derraz H., Kebbab Z., Mathieu C., Khelifa B., Desfeux R., Thin Solid Films, 497 (2006), 58.
• [7] Mahendran C., Suriyanarayanan N., Physica B, 405 (2010), 2009.
• [8] Mahendran C., Suriyanarayanan N., Physica B, 408 (2013), 62.
• [9] Kandaswamy K., Selvin C.P., Nalini B., Abdulla M.I., Abhilash K.P., Adv. Mater. Res., 678 (2013), 123.
• [10] Repins I., Beall C., Vora N., Dehart C., Kuciauskas D., Dippo P., To B., Mann J., Hsu W.C., Goodrich A., Noufi R., Sol. Energ. Mat. Sol. C., 101 (2012), 154.
• [11] Damisa S., Olofinjana J., Ebomwonyi B., Bakare O., Azi F., Mater. Res. Express, (2017), 2053.
• [12] Haider A., Kizir S., Ozgit Akgun C., Okyay A.K., Biyikli N., J. Vac. Sci. Technol. A, 34 (2016), 01A123.
• [13] Muthukumaran S., Ashok Kumar M., Mater. Lett., 93 (2013), 223.
• [14] Soumya R., Ajaya K., Lata D., Narendra Pratap S., Mariya P., J. Fluoresc., 26 (2015), 459.
• [15] Balasubramanian V., Suriyanarayanan N., Prabahar S., Chalcogenide Lett., 8 (2011), 637.
• [16] Balasubramanian V., Suriyanarayanan N., Mater. Lett., 91 (2013), 362.
• [17] Deshmukh S.G., Panchal A.K., Vipul K., AIP Conf. Proc., (2016), 20023.
• [18] Xuelian Y., Cao Chuanbao, Cryst. Growth Des., 2008 (2008), 1.
• [19] Mane R.S., Sankapal B.R., Lokhande C.D., Mater. Chem. Phys., 60 (1999), 158.
• [20] Liu C., Yang Y., Li W., Li J., Li Y., Chen Q., Sci. Rep.-UK, 6 (2016), 23451.
• [21] Hammad A.H., Elmandouh Z.S., Elmeleegi H.A., Acta Phys. Pol. A, 127 (2015), 901.
• [22] Lai C.H., Huang K.W., Cheng J.H., Lee C.Y., Lee W.F., Huang C.T., Hwang B.J., Chen L.J., J. Mater. Chem., 19 (2009), 7277.
• [23] Wang J., Chew S.Y., Wexler D., Wang G.X., Ng S.H., Zhong S., Liu H.K., Electrochem. Commun., 9 (2007), 1877.
• [24] Zhao W., Zhu X., Bi H., Cui H., Sun S., Huang F., J. Power Sources, 242 (2013), 28.
• [25] Wang A., Wang H., Zhang S., Mao C., Song J., Niu H., Jin B., Tian Y., Appl. Surf. Sci., 282 (2013), 704.
• [26] Ubale A.U., Mater. Chem. Phys., 121 (2010), 555.
• [27] Fazal T., Ismail B., Wafee S., Kambooh A.H., Khan A.R., Chalcogenide Lett., 13 (2016), 225.
• [28] On B,P., Tubtimtae A., Vailikhit V., Teesetsopon P., Choopun S., Phys. Lett. A, 381 (2017), 1807.
• [29] Patterson A.L., Phys. Rev., 56 (1939), 978.
• [30] Williamson G.K., Hall W.H., Acta Metall. Sin., 1 (1953), 22.
• [31] Williamson G.K., Smallman R.E., Philos. Mag., 1 (1956), 34.
• [32] Horcas I., Fernández R., Gómez Rodríguez J.M., Colchero J., Gómez Herrero J., Baro A.M., Rev. Sci. Instrum., 78 (2007).
• [33] He H.Y., Fei J., Lu J., Mater. Manuf. Process, 29 (2014), 1044.
• [34] Sadananda Kumar N., Bangera K.V., Shivakumar G.K., Semiconductors, 49 (2015), 899.
• [35] Hussain A., Begum A., Rahman A., Mat. Sci. Semicon. Proc., 21 (2014), 74.
• [36] Ullah S., Mollar M., Mari B., J. Solid State Electrochem., (2016).
• [37] Toma O., Ion L., Iftimie S., Radu A., Antohe S., Mater. Design, 100 (2016), 198.
• [38] Ates A., Yildirim M.A., Kundakci M., Astam A., Mat. Sci. Semicon. Proc., 10 (2007), 281.
• [39] Man M.T., Lee H.S., Curr. Appl. Phys., 15 (2015), 761.
• [40] Darafarin S., Sahraei R., Daneshfar A., J. Alloy. Compd., 658 (2016), 780.
• [41] Sahraei R., Mohammadi F., Soheyli E., Roushani M., J. Lumin., 187 (2017), 421.
• [42] Sobhani A., Salavati Niasari M., Superlattice. Microst., 59 (2013), 1.
• [43] Sarma M.P., Kalita J.M., Wary G., Mat. Sci. Semi-con. Proc., 61 (2017), 131.
• [44] Sarma M.P., Kalita J.M., Wary G., Mater. Res. Express., 4 (2017), 45005.

Uwagi

PL

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).