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EN
Thermal desorption of Ar implanted with energies 150 keV and 100 keV with fluence 1×10^16 cm^-2 into GaAs is considered. A sudden release of Ar is observed in temperature range 1100 -1180 K as a single narrow peak in TDS (Thermal Desorption Spectroscopy) spectra. This is accompanied by a strong background signal from atmospheric Ar trapped in various parts of the spectrometer. Desorption peak shift analysis allows estimation of desorption activation energy values - these are 3.6 eV and 2.5 eV for implantation energies 150 keV and 100 keV, respectively. These results are comparable to that measured for Ar implanted into germanium target.
EN
A new approach to application the internal evaporator in an arc discharge ion source is presented, namely a crucible with a plug made of feeding substance. This solution is suitable especially for high-melting point metallic feeding substances. The ion source was tested using Ni and Cr. Basic ion source characteristics, i.e. dependences of ion current and discharge voltage on discharge and filament currents as well as on the external magnetic field flux density are shown and discussed in order to find optimal working conditions. The maximal ion currents were 18 μA for Ni+ and 38μA for Cr+. The stability of the ion current was also tested. It was proven that ion source is able to provide intense ion beam current long enough to perform irradiations with the fluence of ~5×1015 cm-2 confirming the usefulness of the design for ion implantation purposes.
EN
Thick (0.125 mm) sheet samples of PET were irradiated with 150 keV Cs+ ion beam with fluences in the range from 10^13 cm^-2 up to 10^16 cm^-2). Raman and UV-VIS spectroscopy measurements shown destruction of numerous bonds within the polymer – this effect intensifies with fluence. Raman spectroscopy shows the presence of amorphous graphitelike structures as the broad G band appears in the collected spectrum. The analysis of absorbance spectra also confirms formation of numerous carbon clusters leading to a formation of vast conducting structures in the modified layer of the polymer. One can observe the decrease of optical bandgap from 3.85 eV (typical for pristine PET) to 1.05 eV for the sample implanted with the highest fluence, the effect is weaker than for lighter alkali metal ions. The estimated average number of C atom in a clusters reaches in such case values close to 1100. The changes in the polymer structure lead to intense reduction of electrical sheet resistivity of the modified samples by ~ 8 orders of magnitude in the case of severely modified sample. The dependence of resistivity on temperature has also been measured. The plots of ln(σ) vs 1/T show that band conductivity or nearest neighbor hopping between conducting structures prevail in the considered case
4
Content available remote Termodesorpcja argonu implantowanego do germanu
PL
Badano termodesorpcję Ar zaimplantowanego do germanu (z energią 100 keV i 150 keV, dawka 2×1016 cm-2). Zaobserwowano gwałtowne uwolnienia Ar w temperaturach 790-840 K w postaci wąskich wierzchołków w widmach TDS, co świadczy najprawdopodobniej o uwalnianiu Ar zgromadzonego w postaci bąbli we wnękach w Ge. Analiza przesunięć położenia wierzchołków pozwoliła oszacować wartości energii aktywacji desorpcji – wynosi ona 3.2 eV (100 keV) i 2.2 eV (150 keV) - znacznie więcej niż uzyskane w przypadku He implantowanego do Ge.
EN
Thermal desorption of Ar implanted into germanium (with energies 100 keV and 150 keV, fluence 2×1016 cm-2) was studied. Sudden release of Ar was observed as narrow peaks in temperature range 790-840 K in TDS spectra, which may be assigned to the release of gas trapped as bubbles in cavities in the Ge lattice. The analysis of peak shifts enabled estimation of desorption activation energies - it is 3.2 eV (100 keV) and 2.2 eV (150 keV) - these values are much larger than those measured for He implanted into Ge.
5
Content available remote Modyfikacja właściwości folii PET przy wykorzystaniu naświetlania jonami K+
PL
Cienkie (3 m) folie PET implantowano jonami K+ (150 keV, dawki 1014 cm-2, do 1016 cm-2. Zaobserwowano niszczenie różnego rodzaju wiązań chemicznych i powstanie struktur grafitopodobnych a także wzrost absorbancji modyfikowanych próbek w widmie UV-VIS oraz zwężenie przerwy energetycznej z około 4 eV aż do 0.55 eV (1016 cm-2). Implantacja spowodowała spadek oporności powierzchniowej warstwy zmodyfikowanej o około 6 rzędów wielkości oraz wzrost stałej dielektrycznej folii: od kilku procent dla dawki 1014 cm-2 do ~65 % dla dawki 1016 cm-2.
EN
Thin (3 m) PET foils were implanted with K+ ions (150 keV, fluences from 1014 cm-2 to 1016 cm-2). Destruction of various chemical bonds and formation of graphite-like structures as well as the increase of absorbance in UV-VIS spectra and narrowing of the energy bandgap from ~4 eV to 0.55 eV (1016 cm-2) were observed. Ion implantation leads to the reduction of sheet resistance by 6 ordes of magnitude as well as to the increase of dielectric constant of the sample by several percent (1014 cm-2) up to 65 % for the maximal fluence.
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