CISCut [CuInS2(CIS) on Cu tape ] is a new fabrication technology for chalcogenide absorber layers for solar cells. In a roll-to-roll process, indium is electrochemically deposided on a copper tape, and subsequently sulphurised. It has been shown that various Cu-In-S phases are formed, depending on fabrication parameters. After completion with a Cu(O,S) window layer, the structure behaves as a photovoiltaic p-n junction, the copper substrate being the n-side and the Cu(O,S) layer being the p-side. In this paper, evidence is given that the electronic p-n junctions is located inside the CIS layer, and not at the Cu(O,S) interface. Solar cells were prepared with a small area dot contact of Cu(O,S) of varying size and their I-V curves were analysed. Uniformly illuminated cells show too large a light current, and a low fill factor, due to pronunced shunt. The measured phenomena were explained quantitatively by phenomenological model, which asssumes that there is an internal p-n junction inside the absorber layer, and that this p-layer near the surface has a non-negligible lateral conductance. Fitting of measured and simulated I-V curves, as a function of the dot size, allowed estimating the sheet resistance of the p-type layer.