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Open Physics
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2014
|
tom 12
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nr 8
559-564
EN
The surface relaxation and the formation of a single vacancy in very thin Cu (001) film formed by 2 ∼ 14 atomic layers have been studied by using MAEAM and MD simulation. For the surface relaxtion, the highest surface energy is in the l = 2 atomic layers. The multilayer relaxation mainly occurs between the first two atomic layers, and the maximum contractive displacement is obtained in the very thin Cu (001) film formed by l = 3 atomic layers. For the vacancy formed in l′ = 1 of the very thin Cu (001) film formed by l = 2 ∼ 14 layers, the most difficult site in the film formed by l = 3 atomic layers.
EN
When designing new biomaterials for tissue contact devices it is important to consider their architecture as it affects different cell response. Surface modification of tubular structures requires the use of different techniques than in the case of flat samples. Similarly, analytical techniques also need to be adapted to the specific shape of substrate. For blood contacting devices this issue is critical because of shear forces generated by fluid flow and responsible for blood components activation. This necessitates the use of diagnostic techniques dedicated for material analysis in dynamic conditions in order to simulate physiological conditions. In the frame of the work, the flat samples as well as tube like elements were considered. The flat samples were prepared for basic research. Based on the results of the basic research the thin coatings were selected for the internal side of the tube like elements which have been analysed in contact with blood using blood flow simulator. The cross section of the coating-substrate interaction was tested using transmission electron microscopy. The attachment of cells to coatings was determined by radial flow chamber. Hemocompatible analysis was carried out in two ways. The quality of the blood after the dynamic test was analysed using flow cytometry. In this case the aggregates formation, platelet consumption and apoptosis derived microparticles were considered. The amount of cells adhered to the materials surfaces was determined by confocal laser microscopy.
EN
The paper presents design and properties of the system for measuring of the magnetoresistance of multilayers and thin films. The measurement is automated using a computer with LabVIEW programming environment. labVIEW is a commercial high level praphical programming language that is designed for data acquisition and control. This paper discusses the applicability of LabVIEW in programming data acquisition systems in the physical experiments and demonstrates its utility in magnetoresistance measurements.
4
Content available remote Liquid and liquid-gas cooling of machine elements
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EN
In the work presented are thermal and hydraulic problems concerned with the liquid films formed by impinging jets. Formulated has been a simple two-dimensional model of the flow and heat transfer in the film. The model is based on simplified equations of mass, momentum and energy balance. Solution of such set of equations enables determination of velocity profile in the film as well as local heat transfer coefficients.
5
Content available remote Stability of Finite-size Argon Thin Film Coating Single Wall Carbon Nanotube
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EN
The structure and the dynamics of the argon thin film coating (15,4) and (12,12) carbon nanotubes have been studied in a series of molecular dynamic simulations. In the studied temperature regime, the argon atoms in the thin film were well localized. Structural changes and diffusion process inside the argon layers were not been observed. The influence of the chirality and the radius of the nanotube to the cluster properties is also reported.
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Content available remote Photo-induced superhydrophilicity of nanocomposite iO2-SiO2 thin film
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EN
In this work, TiO2 and TiO2-SiO2 thin films on glass substrates were prepared by the sol-gel dip coating process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) were used to evaluate the structural and chemical properties of the films. The super-hydrophilicity was assessed by water contact angle measurement. XRD measurements confirmed the presence of polycrystalline anatase and rutile phases in the films. The water contact angle measurements showed that addition of SiO2 has a significant effect on the super-hydrophilicity of TiO2 thin films, especially if they are stored in a dark place.
7
100%
EN
In this paper, the Fe2O3 thin film were prepared with various ratios doping of NiO by spray pyrolysis method on glass substrate temperature 400 ºC. The initial solution was including a 0.1 M/L for both NiCl2 and FeCl3 diluted with redistilled water and a few drops of HCl. The effect of NiO-doping on optical properties were studied. UV-Visible spectrophotometer in the range of (300-900) nm used to determine absorbance spectra. The transmittance increased with increasing NiO content in NiO:Fe2O3 thin films, same behavior of extinction coefficient and skin depth. The energy gap increased from 2.45 eV before doping to 2.86 eV after 3% NiO-doping. While the reflectance, absorption coefficient, and refractive index are decreased with increasing NiO content in Fe2O3 thin films.
8
Content available remote Post-deposition stress evolution in Cu and Ag thin films
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EN
Evolution of stresses in thin Cu and Ag films after deposition by thermal evaporation in UHV system is studied. Thin films were deposited on 100 um thick Si substrate at room temperature. Deposition rates for the Cu and Ag films were 0.5 A/s and 0.9 A/s, respectively. The total thickness ranged from 7.7 up to 109 nm. The average stress in the films was determined by measuring the radius of samples curvature. The behavior of stress evolution curves is explained by two mechanisms of stress generation: filling grain boundaries and islands coalescence.
9
Content available remote On the microstructure of TiHfOx thin films
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EN
Transition metal oxides, whose optical band gap might be modified by doping or manufacturing using two (or more) oxides with different band gaps, are good candidates for host matrices in luminescent devices. This paper presents structural properties of TiHfOx thin films and analysis of dependence of their optical properties on thin film structure. In order to examine the microstructure of manufactured thin films the X-ray diffraction (XRD) and atomic force microscopy (AFM) were applied. The optical properties of manufactured thin films were investigated by optical transmission method in the spectral range from 200 to 1400 nm.
EN
One of the major topics in novel microelectronics are thin film materials - especially their mechanical properties. Accurate description of such materials is necessary in order to assess their reliability and to predict failures in electronic devices. The mechanical attributes of thin films can be determined using the nanoindentation test. However, with this equipment it is only possible to obtain estimates elastic parameters: Young´s modulus and hardness of the thin layer. In the paper, it is demonstrated that with a support of numerical methods the plastic behaviour of the material can also be extracted. The numerical FEM model of the nanoindentation test was elaborated and numerical optimization algorithms were applied. The goal was to examine the elastoplastic behaviour of the investigated thin film, which is the aluminium layer in this case. Various numerical material models were used in order to decently extract the material properties of the investigated thin layer.
EN
Titanium dioxide thin films have been deposited on silicon wafers substrates by an atomic layer deposition (ALD) method. There optical parameters were investigated by spectroscopic ellipsometry and UV/VIS spectroscopy. A material with a refractive index of 2.41 was obtained. Additionally, in a wide spectral range it was possible to reduce the reflection from the silicon surface below 5%. The Raman spectroscopy method was used for structural characterization of anatase TiO2 thin films. Their uniformity and chemical composition are confirmed by a scanning electron microscope (SEM) energy dispersive spectrometer (EDS).
EN
Electrical properties of Zn-Bi-O thin films were characterised in the paper. The layers were deposited on metal substrates by application of the r.f. magnetron sputtering of Zn-Bi substrate in oxygen atmosphere. Properties of the samples were described by current-voltage characteristics (obtained for dc. polarisation) and results of measurements of electrical permittivity ε and loss factor (tgδ) (in the range of acoustic frequencies). Characteristics obtained for all of the samples exhibited strong non-linearity (varistor effect). Hopping model for charge carriers transport was suggested as the most probable mechanism of electrical conduction in the layers. Other conduction models were also discussed in the paper. Additionally an electromotive force of the order of 0.17V was detected for fresh samples. The presented results of preliminary investigations may create a base for the wider investigation of conduction processes appearing in thin Zn-Bi-O layers.
EN
CdZn(S1-xSex )2 thin films have been deposited onto glass substrates by the spray pyrolysis method at a 275°C substrate temperature. The average optical transmittance of all the films was over 65% in the wavelength range 450-800 nm. The optical absorption studies reveal that the transition is direct with band gap energy values between 2.47-3.04 eV. The optical constants such as refractive index, extinction coefficient and dielectric constants have been calculated for these films. The dispersion parameters such as Eo (single-oscillator energy) and Ed (dispersive energy) have been discussed in terms of the Wemple-DiDomenico single-oscillator model. The values obtained by this method are suitable for many scientific studies and technological applications, such as gas sensors, heat mirrors, transparent electrodes, solar cells and piezoelectric devices.
EN
Modifications to the 306 Edwards sputtering system have been discussed for the production of sensitive thin films, specifically amorphous pyroelectric perovskite films. For technical reasons, it is not possible to produce high quality thin films using standard sputtering systems. Furthermore, additional problems arise with the reproducibility of the films. The authors found that in unmodified sputtering systems, a general problem is that independent adjusting of the pressure in the chamber and the gas flow during the sputtering is not possible. Additional problems were low accuracy of gas ratio measurements, and high temperature radiation during sputtering which made impossible keeping the temperature conditions during deposition. Modifications to a standard set-up have been proposed and its operation has been checked. As a test-case, SrTiO3 thin film samples were fabricated. Their high quality confirmed validity of the modifications.
EN
Tin selenide thin films were prepared through combination of chemical precipitation and vacuum evaporation technique. The vacuum deposition was carried out at different quantity of the starting material. The difference in the structural and compositional properties of the deposited films were studied. The films were characterised using various techniques such as x-ray diffractometry, scanning electron microscope and energy dispersive analysis of x-ray. Photoactivity of the samples was studied using linear sweep voltammetry. The films were found to be p-type semiconductors. The optical bandgap energy was found to be indirect and equal to Eg = 1.25 eV.
EN
Alumina and scandia doped zirconia was prepared through a soft chemistry synthesis route and sintered at 1873 K. X-ray diffraction patterns indicate a pure cubic phase for the composition of 0.88ZrO2–0.112Sc2O3–0.008Al2O3. Thin films were fabricated on Al2O3 <0001> substrates using pulsed laser deposition technique. Dense films of 0.941 m thickness were obtained at 873 and 1023 K substrate temperatures at an oxygen partial pressure of 15 Pa. The ionic conductivity of both thin film and sintered pellet was measured using ac impedance spectroscopy in air. The conductivity values are higher for thin films compared to that of sintered pellets.
EN
CISCut [CuInS2(CIS) on Cu tape ] is a new fabrication technology for chalcogenide absorber layers for solar cells. In a roll-to-roll process, indium is electrochemically deposided on a copper tape, and subsequently sulphurised. It has been shown that various Cu-In-S phases are formed, depending on fabrication parameters. After completion with a Cu(O,S) window layer, the structure behaves as a photovoiltaic p-n junction, the copper substrate being the n-side and the Cu(O,S) layer being the p-side. In this paper, evidence is given that the electronic p-n junctions is located inside the CIS layer, and not at the Cu(O,S) interface. Solar cells were prepared with a small area dot contact of Cu(O,S) of varying size and their I-V curves were analysed. Uniformly illuminated cells show too large a light current, and a low fill factor, due to pronunced shunt. The measured phenomena were explained quantitatively by phenomenological model, which asssumes that there is an internal p-n junction inside the absorber layer, and that this p-layer near the surface has a non-negligible lateral conductance. Fitting of measured and simulated I-V curves, as a function of the dot size, allowed estimating the sheet resistance of the p-type layer.
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PL
Cienkie, przezroczyste i przewodzące warstwy SnO2:Sb nanoszone były na szklane podłoża metodą spray - hydrolizy przy zastosowaniu dyspergatora ultradźwiękowego oraz metodą zol-żel. Badano właściwości elektryczne i optyczne otrzymanych warstw SnO2:Sb. Przeprowadzono porównawcze badanie właściwości warstw otrzymanych różnymi metodami. Badano też układ z cienkowarstwowym elementem grzejnym.
EN
Transparent, conducting thin films of SnO2:Sb were deposited on glass substrates by spray-hydrolysis method using ultrasonic atomizer and by sol-gel dip-coating method. The electrical and optical properties of the as - deposited SnO2:Sb films were determined. Comparative studies of properties of SnO2:Sb thin films prepared by various method were presented. Electric heating system with a thin - film heater was investigated as well.
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Content available remote Badanie własciwości warstw SnO2:Sb z wykorzystaniem mikroskopii elektronowej
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PL
W pracy przedstawione są rezultaty badań wpływu temperatury podłoża na właściwości i skład warstw SnO2:Sb, nanoszonych metodą spray-hydrolizy. Wykonano badania fraktograficzne metodą mikroskopii skaningowej oraz przeprowadzono analizę składu warstw metodą mikroanalizy rentgenowskiej.
EN
The conducting SnO2:Sb films were deposited on glass substrates by spray hydrolysis method. The paper discusses the effect substrate temperature on the properties of thin films. The analysis of the chemical composition on the obtained films was done by the X-ray microanalysis method.
EN
Transparent iron-doped titanium oxide thin films were prepared on soda-lime-silica glass substrate from a titanium naphthenate precursor. Films prefired at 500°C for 10 min were finally annealed at 500°C for 30 min in air. Field emission-scanning electron microscope and scanning probe microscope were used for characterizing the surface structure of the film. A sharp absorption edge of the film was observed. The film containing iron showed a shift towards the visible in the absorption threshold.
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