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1
Content available remote Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers
100%
Hockicko P. , Bury P. , Sidor P. , Kobayashi H. , Takahashi M. , Yanase T.
Open Physics
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2011
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tom 9
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nr 1
242-249
EN
A set of MOS structures with thin SiO2 layers prepared by nitric acid oxidation (NAOS) method was investigated using acoustic deep level transient spectroscopy (A-DLTS) to explain the role of annealing treatment (post-oxidation annealing (POA) and post-metallization annealing (PMA)) at different conditions on the distribution of interface states. The activation energies of interface states and the corresponding capture cross-section were calculated both from Arrhenius plots constructed for individual peaks of the A-DLTS spectra and applying the method of modeling of measured acoustic spectra. The energy distribution of the interface states was determined also from the dependence of acoustoelectric response signal (ARS) on the external bias voltage (U ac - V G curves). By comparing the A-DLTS spectra, U ac - V G characteristics and some electrical measurements (G-V, I-V curves) of investigated MOS structures with no treatment with those treated with POA and/or PMA, the role of individual treatments was observed. The definite decrease of the interface states in the structures with the PMA treatment in comparison with the POA treatment was confirmed too.
2
Content available remote Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry
100%
Nesheva D. , Nedev N. , Curiel M. , Dzhurkov V. , Arias A. , Manolov E. , Mateos D. , Valdez B. , Bineva I. , Herrera R.
Open Physics
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2015
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tom 13
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nr 1
EN
This article makes a brief review of the most important results obtained by the authors and their collaborators during the last four years in the field of the development of metal-insulator-silicon structures with dielectric film containing silicon nanocrystals, which are suitable for applications in radiation dosimetry. The preparation of SiOx films is briefly discussed and the annealing conditions used for the growth of silicon nanocrystals are presented. A two-step annealing process for preparation of metal-oxide-semiconductor structures with three-layer gate dielectrics is described. Electron Microscopy investigations prove the Si nanocrystals growth, reveal the crystal spatial distribution in the gate dielectric and provide evidences for the formation of a top SiO2 layerwhen applying the two-step annealing. Two types of MOS structures with three region gate dielectricswere fabricated and characterized by high frequency capacitance/conductancevoltage (C/G-V) measurements. The effect of gamma and ultraviolet radiation on the flatband voltage of preliminary charged metal-oxide-semiconductor structures is investigated and discussed.
3
Content available remote Acoustic spectroscopy and electrical characterization of SiO2/Si structures with ultrathin SiO2 layers formed by nitric acid oxidation
88%
Bury P. , Kobayashi H. , Takahashi M. , Imamura K. , Sidor P. , ÄŒernobila F. e.
Open Physics
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2009
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tom 7
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nr 2
237-241
EN
Ultrathin silicon dioxide (SiO2) layers formed on Si substrate with nitric acid have been investigated using both acoustic deep-level transient spectroscopy (A-DLTS) and electrical methods to characterize the interface states. The set of SiO2/Si structures formed in different conditions (reaction time, concentrations of nitric acid (HNO3), and SiO2 thickness [3–9 nm]) was prepared. The leakage current density was decreased by post-oxidation annealing (POA) treatment at 250°C in pure nitrogen for 1 h and/or post-metallization annealing (PMA) treatment at 250°C in a hydrogen atmosphere for 1 h. All structures of the set, except electrical investigation, current-voltage (I - V), and capacitance — voltage (C - V) measurements, were investigated using A-DLTS to find both the interface states distribution and the role of POA and/or PMA treatment on the interface-state occurrence and distribution. The evident decreases of interface states and shift of their activation energies in the structures with PMA treatment in comparison with POA treatment were observed in most of the investigated structures. The results are analyzed and discussed.
4
Modeling the charge trapping effect in high-K gate stacks on the tunnel current
63%
Mazurak A. , Majkusiak B.
Elektronika : konstrukcje, technologie, zastosowania
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2011
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tom Vol. 52, nr 3
33-35
EN
Two approaches towards charge trap modeling are presented in the work a charge trap is modeled as a quantum well. The transfer matrix method with inclusion of carrier scattering in the well is used for the tunneling probability calculation. The influence of scattering rate in the well and spatial location of the well in the insulator layer is studied.Then the effect of space distribution of oxide traps on the tunnel current is investigated. Simulated current-voltage characteristics for the two cases are presented and the effect of charge trapping on the tunneling process is discussed.
PL
Przedstawiono dwa sposoby modelowania wpływu pułapkowania ładunku na prąd tunelowy. Aktywna elektrycznie pułapka wewnątrz stosu bramkowego jest reprezentowana przez studnię kwantową. Prawdopodobieństwo tunelowania obliczane jest z wykorzystaniem metody macierzy przejścia, uwzględniając rozpraszanie nośników wewnątrz studni kwantowej. Zaprezentowano wpływ stałej czasowej rozpraszania, geometrycznego położenia studni potencjału oraz dystrybucji przestrzennej centrów pułapkowych na prąd tunelowy. W pracy przedstawiono wyniki symulacji charakterystyk prądowo-napięciowych oraz dyskusję wpływu pułapkowania nośników na proces tunelowania.
5
Content available Pomiary naprężeń w strukturach MOS metod interferencyjną i za pomocą elipsometrii spektroskopowej
51%
Borowicz L. K. , Borowicz P. , Rzodkiewicz W. , Piskorski K.
Pomiary Automatyka Kontrola
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2007
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tom R. 53, nr 9 bis
325--328
PL
Zmierzone parametry elektryczne struktur MOS wskazują na obecność naprężeń mechanicznych panujących w tlenku pod powierzchnią bramki metalowej. Przyjęto do badań dwie metody optyczne: elipsometrii i mikro-interferometrii. Do oceny ugięcia prążków interferencyjnych spowodowanego zmianami drogi optycznej w warstwie dielektryka pod wpływem naprężeń stworzono oprogramowanie komputerowe oparte na regresji nieliniowej. Inny sposób oceny tej wielkości wykorzystuje ekwidensytometrię. Pomiary optyczne pozwoliły wyznaczyć niektóre składowe tensora naprężeń w warstwie dielektryka sąsiadującej z krawędzią bramki.
EN
Observed changes in some electrical parameters of MOS structures indicate existence of stresses in SiO2 layer under aluminum gate. In order to find out why these parameters were changed, we have studied optical properties of the dielectric in the vicinity of metal and poly-silicon gate.
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