Wyniki wyszukiwania - Biblioteka Nauki

1

An algorithm for the calculation of heavy ion ranges in SiO2

100%

Kabadayi Ö. , Gümüs H.

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2003

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tom Vol. 48, nr 3

145-149

EN

The heavy ion ranges in amorphous SiO2 have been calculated by using a technique based on solution of first order ODE’s. Br, Au, Hg, Bi, projectiles have been chosen as incident ion. Since the target is assumed to be amorphous, Bragg’s rule can be used to calculate electronic and nuclear stopping powers in the compound. Numerical solutions have been performed by using Fehlberg fourth-fifth order Runge-Kutta method. The results are compared with experimental data, as well as with the result of the Monte Carlo program SRIM and other standard procedures such as PRAL and WS [19]. It is found that the agreement between our method and the experiment is good and within 10%.

2

Wettability of the surface of bacterial cellulose film modified with the ion implantation

100%

Betlej I. , Barlak M. , Wilkowski J. , Werner Z. , Zagórski J. , Lipska K. , Boruszewski P.

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tom No. 118

15--21

EN

Wettability of the surface of bacterial cellulose film modified with low energy ion implantation The paper presents the preliminary results of the modification on the water wettability of cellulose, using ion implantation method. Two kinds ions of the noble gases, i.e. helium and argon were implanted with fluences of 1e15 nand 1e16 cm-2, and with the ion energy of 60 keV. The measurements of the contact angle values show the different influence of both types ions on the hydrophobicity of the modified cellulose, but the hydrophobicity of implanted cellulose increases in all cases. The real investigations were supplemented with the modelling results of the depth profiles of the implanted ions and the main parameters of the modelled peaks.

PL

Zwilżalność powierzchni celulozy bakteryjnej modyfikowanej metodą implantacji jonów. Artykuł przedstawia wstępne wyniki modyfikacji na zwilżalność wodą implantowanej jonami celulozy. W badaniach wykorzystano dwa rodzaje gazów szlachetnych, tj. hel i argon. Implantowane dawki wynosiły 1e15 i 1e16 cm-2, a energia jonów 60 keV. Pomiary kąta zwilżania pokazują różny wpływ obydwu typów jonów na hydrofobowość modyfikowanej celulozy, jednakże hydrofobowość wzrasta we wszystkich przypadkach. Badania zostały uzupełnione wynikami modelowania głębokosciowych profili implantowanych jonów i głównych parametrów modelowanych pików.

3

High - temperature oxidation resistance in yttrium implanted stainless steel

100%

Barlak M. , Piekoszewski J. , Werner Z. , Sartowska B. , Waliś L. , Starosta W. , Kierzek J. , Kowalska E. , Wilhelm R. A. , Pochrybniak C. , Woźnica M.

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tom Vol. 57, No. 4

473-476

EN

Austenitic AISI 304, 316L and ferritic 430 stainless steels were implanted with yttrium to fluences ranging between 1 x 1015 and 5 x 1017 ions/cm2. The samples were subjected to oxidation in air at a temperature of 1000 centigrade for a period of 100 h and next examined by stereoscopic optical microscopy (OM), scanning electron microscopy (SEM), energy dispersive X-ray spectrometry (EDX) and Rutherford back scattering spectrometry (RBS). The results obtained with the use of ion implantation are discussed.

4

Post acceleration of ions emitted from laser and spark - generated plasmas

100%

Torrisi L. , Cavallaro S. , Rosiński M. , Nassisi V. , Paperny V. , Romanov I.

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tom Vol. 57, No. 3

323-332

EN

Pulsed lasers at intensities of the order of 1010 W/cm2 interacting with solid matter in vacuum, produce hot plasmas at high temperatures and densities. The charge state distributions of the plasma generate a high electric field, which induces high ion acceleration along the normal to the target surface. The high yield of the emitted ions can generate a near constant current by using repetitive pulses irradiating thick targets. In order to increase ion energy, a post-acceleration system can be employed by using acceleration voltages above 10 kV. Special ion extraction methods can be employed to generate the final ion beam, which is multi-ionic and multi-energetic, due to the presence of different ion species and of different charge states. In this article four different methods of post ion acceleration, employed at the INFN-LNS of Catania, at the IPPLM of Warsaw, at the INFN of Lecce and at the LPI of Moscow, are presented, discussed and compared. All methods are able to implant ions in different substrates at different depth and at different dose-rates.

5

Tribological effects of ion implantation of Inconel 600

100%

Chmielewski M. , Barlak M. , Pietrzak K. , Kaliński D.

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tom Vol. 57, No. 3

357-362

EN

Commercial Inconel 600 nickel-chromium alloy was implanted with nitrogen, chromium, titanium, yttrium and copper with tin (as bronze components) ions to doses ranging from 1.6e17 to 3.5e17 cm-2. The main goal of the research was to investigate the properties of the modified alloy in the context of its application in foil bearings. The virgin and the treated samples were tribologically tested and examined by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The technological studies were preceded by modelling of concentration values of the introduced elements. The results obtained with the use of ion implantation are discussed.

6

The influence of ion implantation on tribological properties improvement of PE-UHMW polyethylene

100%

Gierzyńska-Dolna M. , Rajchel B. , Adamus J. , Więckowski W.

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1999

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tom Vol. 4, no spec.

213-218

EN

In the paper the attention was drawn to the disadvantageous reaction of wear products of polyethylene, used for endoprostheses elements, on human organism. Test results of improving tribological properties of polyethylene by ion implantation have been given. The best results were obtained after boron ion implantation.

7

Modyfikacja tworzyw elastomerowych za pomocą wiązek jonów

100%

Ostaszewska U. , Jagielski J. , Bieliński D. , Piątkowska A.

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tom Vol. 32, nr 4

652-654

PL

Badania nad zastosowaniem wysokoenergetycznych wiązek jonów do modyfikacji materiałów zostały zapoczątkowane wynikami projektu Manhattan poświęconego budowie broni jądrowej. W kolejnych etapach badano wpływ implantacji jonów na własności półprzewodników, metali, ceramik, a ostatnio tworzyw polimerowych. Najnowszym obszarem zastosowań implantacji jest modyfikacja elastomerów, popularnie znanych jako gumy. W pracy omówiono wyniki badań strukturalnych i pomiarów własności funkcjonalnych zaawansowanych elastomerów stosowanych w przemyśle lotniczym i specjalnym, poddanych procesowi bombardowania jonowego. Do najważniejszych wyników pracy należy zaliczyć pomiar kinetyki i identyfikację mechanizmów uwalniania wodoru z implantowanych elastomerów, określenie zmian strukturalnych zachodzących pod wpływem bombardowania jonowego oraz uzyskanie kilkakrotnego zmniejszenia współczynnika tarcia i zwiększenia odporności na zużycie implantowanych tworzyw. Efekt ten został opatentowany, prowadzone są prace nad jego praktycznym zastosowaniem w uszczelnieniach połączeń ruchomych.

EN

Studies on material modification by highly energetic ion beams have been initiated in the frames of the Manhattan project devoted to the construction of nuclear weapons. In the next steps the modification of semiconductors, metals, ceramics and, only recently, polymers were carried out. The newest area of the use of ion beams is modification of elastomers, commonly known as rubbers. In the paper the results of the analysis of structural and functional properties of irradiated elastomers used in aircraft and military industry have been discussed. The most important results are: analysis of the release of hydrogen from irradiated elastomers and the identification of release mechanisms, analysis of structural changes caused by irradiation and the possibility of significant, few times decrease of fiction coefficient and wear rate. These effects have been patented and practical applications in movable sealings are underway.

8

Structural disturbances of near-surface areas in silicon solar cell modified by P+ ion implantation and thermal treatment

100%

Bonarski J. T. , Zehetbauer M. , Swiatek Z. , Fodchuk I. M. , Kopacz I. , Bernstorff S. , Amenitsch H.

Opto-Electronics Review

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2000

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tom Vol. 8, No. 4

323-327

EN

Structural changes of <001> - oriented Si-single crystal platelets after P+ ion implantation and subsequent thermal treatment were analysed by means of diffraction methods using the synchroton radiation with energy of 8 keV. Ion implantation was preceded by P and B diffusion processes to generate n-p junction and BSF (back sufrace field). The results obtained for such monocrystalline Si with a buried amorphised layer permitted to estimate the structural changes caused by the process of the layer formation. Analysis of the diffraction line profiles as well as of the pole figures showed that the crystal regions in the near-surface layer experienced certain misorientations. Both the effective depth of a strongly defected region, and the stress distribution in the sub-surface area were determoned. The evaluation of the diffraction patterns allowed estimating the widths of the amorphised layer and of the transition zone between the amorphised region and the bulk. Moreover, the static Debye-Waller coefficient L and the diffusion loss parameter d were calculated. The above structure parameters are compared with those for conventional Si solar cells (without structural modification).

9

Ion Beam Induced Surface Modification of ta-C Thin Films

100%

Berova M. , Sandulov M. , Tsvetkova T. , Kitova S. , Bischoff L. , Boettger R.

Acta Physica Polonica A

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2017

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tom 132

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nr 2

299-301

EN

Thin film samples (d ≈40 nm) of tetrahedral amorphous carbon (ta-C), deposited by filtered cathodic vacuum arc, were implanted with Ga⁺ at ion energy E =20 keV and ion fluences D=3×10¹⁴-3×10¹⁵ cm¯² and N⁺ with the same energy and ion fluence D=3×10¹⁴ cm¯². The Ga⁺ ion beam induced surface structural modification of the implanted material, displayed by formation of new phase at non-equilibrium condition, which could be accompanied by considerable changes in the optical properties of the ta-C films. The N⁺ implantation also results in modification of the surface structure. The induced structural modification of the implanted material results in a considerable change of its topography and optical properties. Nanoscale topography and structural properties characterisation of the Ga⁺ and N⁺ implanted films were performed using atomic spectroscopy analysis. The observed considerable surface structural properties modification in the case of the higher fluence Ga⁺ implanted samples results from the relatively high concentration of introduced Ga⁺ atoms, which is of the order of those for the host element.

10

Change of silica luminescence due to fast hydrogen ion bombardment

100%

Zhurenko V. P. , Kalantaryan O. V. , Kononenko S. I.

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tom Vol. 60, No. 2

289--292

EN

This paper deals with the luminescence of silica (KV-type) induced by beam of hydrogen ions with the energy of 210 keV per nucleon. An average implantation dose of up to 3.5 × 1021 cm–3 (5 × 1010 Gy) was accumulated during irradiation over an extended period. The luminescent spectra consisted of the blue band (maximum at 456 nm) and the red band (650 nm) in the visible range. It was shown that increase in the absorption dose had an effect on the silica luminescence. It was found that the most significant changes in the spectrum occurred during the dose accumulation in the region of 550–700 nm. The shape of the spectrum of the luminescent radiation in this wavelength range was affected both by the oxygen deficient centres (blue band) and non-bridging oxygen hole centers (red band). Mathematical processing of the experimental spectra permitted to identify contributions to the luminescent radiation coming from both types of defects.

11

Wettability of as-deposited and implanted tetrahedral carbon films

100%

Kutsay O. M. , Kaplunenko O. I. , Gontar A. G. , Loginova O. B. , Perevertailo V. M. , Novikov N. V. , Luk W. Y. , Lifshitz Y. , Bello I. , Lee S. T.

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2005

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tom R. 8, nr 43-44

74-75

EN

Growing and clustering the sp2 bonded carbon fraction in the tetrahedral carbon (ta-C) films by ion implantation is confirmed by Raman spectral analysis. The examination of the film transforming evolved on an atomic scale indicates the formation of structures with the higher degree of order. The graphitic basal planes are formed preferably in the perpendicular direction to the film surface. The implantation gives the change in measured values of the contact angle, which can vary from original near 70 degrees for as deposited films to about 60 degrees for implanted films. The implanted tetrahedral carbon films display very similar surface properties at the quite different bulk structure.

12

Thermal Desorption of Argon Implanted into Gallium Arsenide

100%

Turek M. , Droździel A. , Pyszniak K. , Węgierek P.

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2022

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tom Vol. 16, no 4

318--326

EN

Thermal desorption of Ar implanted with energies 150 keV and 100 keV with fluence 1×10^16 cm^-2 into GaAs is considered. A sudden release of Ar is observed in temperature range 1100 -1180 K as a single narrow peak in TDS (Thermal Desorption Spectroscopy) spectra. This is accompanied by a strong background signal from atmospheric Ar trapped in various parts of the spectrometer. Desorption peak shift analysis allows estimation of desorption activation energy values - these are 3.6 eV and 2.5 eV for implantation energies 150 keV and 100 keV, respectively. These results are comparable to that measured for Ar implanted into germanium target.

13

Post-acceleration of ions from the laser-generated plasma

88%

Giuffrida L. , Torrisi L.

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tom Vol. 56, No. 2

161-163

EN

An application of the laser-generated plasma for multi-energetic ion implantation is reported. In an experiment performed at Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud (INFN-LNS) of Catania, Italy the Nd:YAG laser was used, operating at the 1064 nm wavelength with the intensity of 1010 W/cm2. A laser pulse of 9 ns duration and 300 mJ energy was employed to ablate a solid target placed in a high vacuum. The free ion expansion occurred in a constant potential chamber placed at 30 kV positive voltage with respect to the ground, which allowed to extract ions with energy proportional to the charge state. In an another experiment, performed at the PALS Prague laser facility (1315 nm, 400 ps pulse width and the laser pulse energy delivered on target equal to about 35 J) Ti ions were obtained through the ablation of solid targets in vacuum by means of 1015 W/cm2 laser pulses. In both cases ion energy analyzers were used to measure the energy-to-charge ratio of the ions. The ion energy distribution was determined from the time-of-flight measurements. The depth profiles measured through Rutherford backscattering spectrometry (RBS) analysis are in good agreement with the ion energy analyzer spectroscopy measurements.

14

Development of gettering processes for the preparation of the solar silicon material

88%

Efremov A. A. , Klyui N. I. , Litovchenko V. G. , Popov V. G. , Romanyuk A. B. , Romanyuk B. N.

Opto-Electronics Review

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2000

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tom Vol. 8, No. 4

410-413

EN

A number of gettering treatments of Cz-Si wafers have been investigated. The characteristic parameters of the wafers have been measured. Among the procedures used, the gettering treatment, which included deposition of Ge film, followed by ion beam mixing and thermal annealing was preferred. This treatment allows to increase the diffusion length (Ld) of non-equilibrium carriers from 25-30 µm to 100-300 µm. The subsequent treatments did not lead to deterioration of Ld as it took place for the wafers without gettering treatments.

15

Combined thermal diffusion-ion implantation fabrication processing for silicon solar cells

88%

Kreinin L. , Bordin N. , Eisenberg N. , Grigorieva G. , Zviagina K. , Kagan M.

Opto-Electronics Review

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2000

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tom Vol. 8, No. 4

317-322

EN

Combined fabrication technology utilises the advantages of both thermal diffusion and ion implantation. Thermal gas phase diffusion of phosphorous results in a high quality emitter. Ion implantation as a doping process for back p-p+ barrier formation can be technically optimal and economically effective, despite the costlier nature of ion implantation. Some of the distinct advantages of ion implantation are: controllability, doping uniformity, reproducibility, elimination of some high temperature operations such as protective oxide growth and several wet stages. As a result, the fabrication process is significantly simpler and should provide higher yields, probably at a lower cost, to which the contribution of the ion implantation stage is estimated as 11-13 cents/W. Initially, combined thermal diffusion-ion implantation technology was developed at KVANT for space cell production. Different types of solar cells have been designed, produced and successfully used for the space program : transparent, infrared reflective, bifacial and high resistivity silicon solar cells. Processing has since been improved for application for terrestrial cell fabrication. Samples of terrestrial cells with relatively thick (0.5 - 0.7 µm) passivated low doped emitters demonstrate close to 100% collection of carriers generated by short wavelength light. Internal quantum efficiency in the long wavength range is very high when solar cells are made from FZ silicon and appreciably lower when the starting materials is multicrystalline silicon. Bifacial structures fabricated on FZ substrates by improved processing have a current symmetry factor of 0.7-0.9, which is due to retention of the bulk diffusion length at a level of 600-900 µm. The bifacial structure on multicrystalline substrates is much less effective due to low bulk diffusion length (~130 µm).

16

Influence of the ion implantation of nitrogen and selected metals on the lifetime of WC-Co indexable knives during MDF machining

88%

Barlak M. , Wilkowski J. , Szymanowski K. , Czarniak P. , Podziewski P. , Werner Z. , Zagórski J. , Staszkiewicz B.

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2019

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tom No. 108

45--52

EN

Influence of the ion implantation of nitrogen and selected metals on the lifetime of WC-Co indexable knives during MDF machining. The paper presents the results of durability tests for WC-Co indexable knives during the machining of MDF. The knives were implanted with nitrogen, zirconium, molybdenum and tin, using MEVVA type implanter with non-mass separated beam. Additionally, the Monte Carlo simulation results of the main parameters of the depth profiles of the implanted elements are presented in this paper. A higher correlation of tool life with the project range and range straggling than with the parameter of the peak volume dopant concentration was demonstrated.

PL

Wpływ implantacji jonów azotu i jonów wybranych metali na trwałość wymiennych noży WC-Co podczas obróbki płyt MDF. W artykule przedstawiono wyniki testów trwałościowych wymiennych noży WC-Co podczas obróbki płyt MDF. Noże były implantowane jonami azotu, cyrkonu, molibdenu i cyny, przy użyciu implantatora typu MEVVA bez separacji masowej. Ponadto, w artykule zamieszczono wyniki modelowania profili głębokościowych implantowanych pierwiastków, uzyskanych przy pomocy programu opartego o metodę Monte Carlo. Wykazano wyższe zależności korelacyjne trwałości ostrza z wartościami zasięgu rzutowanego i rozrzutu zasięgu niż z wartościami maksymalnej koncentracji objętościowej domieszki.

17

Modification in surface properties of poly-allyl-diglycol-carbonate (CR-39) implanted by Au+ ions at different fluences

88%

Sagheer R. , Rafique M. S. , Saleemi F. , Arif S. , Naab F. , Toader O. , Mahmood A. , Rashid R. , Hussain I.

Materials Science Poland

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2016

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tom Vol. 34, No. 2

468--478

EN

Ion implantation has a potential to modify the surface properties and to produce thin conductive layers in insulating polymers. For this purpose, poly-allyl-diglycol-carbonate (CR-39) was implanted by 400 keV Au+ ions with ion fluences ranging from 5 × 1013 ions/cm2 to 5 × 1015 ions/cm2. The chemical, morphological and optical properties of implanted CR-39 were analyzed using Raman, Fourier transform infrared (FT-IR) spectroscopy, atomic force microscopy (AFM) and UV-Vis spectroscopy. The electrical conductivity of implanted samples was determined through four-point probe technique. Raman spectroscopy revealed the formation of carbonaceous structures in the implanted layer of CR-39. From FT-IR spectroscopy analysis, changes in functional groups of CR-39 after ion implantation were observed. AFM studies revealed that morphology and surface roughness of implanted samples depend on the fluence of Au ions. The optical band gap of implanted samples decreased from 3.15 eV (for pristine) to 1.05 eV (for sample implanted at 5 × 1015 ions/cm2). The electrical conductivity was observed to increase with the ion fluence. It is suggested that due to an increase in ion fluence, the carbonaceous structures formed in the implanted region are responsible for the increase in electrical conductivity.

18

Modification of TiN coatings by ion implantation

88%

Narojczyk J. , Morozow D.

Acta Mechanica et Automatica

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2017

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tom Vol. 11, no. 3

190--193

EN

The high-speed steel HS 6-5-2 cutting inserts coated with TiN were subjected to ion implantation with both silicon (dose 2x1017Si+ /cm2 ) and silicon with nitrogen ions (dose (1+1)x1017(Si+ + N+ )/cm2 ) on the subsurface layer of the rake face. Microhardness was examined before and after ion implantation. The composition and structural properties of the subsurface layer were examined by Glow Discharge Optical Emission Spectroscopy (GD-OES). The turning tests of 40H construction steel with the use of the cutting inserts implanted and non-implanted were performed. During the tests the two components of the net cutting force (the main cutting force Fc and feed force Ff) as well as the wear parameters VB on the major flankalong with the surface roughness (Ra) were measured. The implanted inserts exhibited higher durability compared to non-implanted ones.

19

Modification of polypropylene membranes by ion implantation

88%

Kotra-Konicka K. , Kalbarczyk J. , Gac J. M.

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nr 3

20

The influence of edge defects on the lifetime of wood machining tools

88%

Barlak M. , Werner Z. , Zagórski J. , Staszkiewicz B. , Wilkowski J. , Szkarłat F. , Osipiuk J.

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2018

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tom No. 104

533--539

EN

The paper presents the results of durability tests for the indexable knives, implanted with nitrogen. The results for non-implanted tools are also included. The selected knives contained edge defects. The defects with the character presented in this paper had a minor impact on the durability of the investigated tools.