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2014 | Vol. 60, No. 2 | 151-156
Tytuł artykułu

AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed.
Wydawca

Rocznik
Strony
151-156
Opis fizyczny
Bibliogr. 18 poz., wykr.
Twórcy
  • Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50–372 Wrocław, Poland, wojciech.dawidowski@pwr.edu.pl
autor
  • Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50–372 Wrocław, Poland, beata.sciana@pwr.edu.pl
  • Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50–372 Wrocław, Poland, iwona.zborowska-lindert@pwr.edu.pl
  • Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava, Ilkovicova 3, 812 19 Bratislava, Slovakia, miroslav.mikolasek@stuba.sk
  • Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50–372 Wrocław, Poland, damian.radziewicz@pwr.edu.pl
autor
  • Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50–372 Wrocław, Poland, damian.pucicki@pwr.edu.pl
autor
  • Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50–372 Wrocław, Poland, katarzyna.bielak@pwr.edu.pl
autor
  • Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50–372 Wrocław, Poland, mikolaj.badura@pwr.edu.pl
autor
  • Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava, Ilkovicova 3, 812 19 Bratislava, Slovakia, jaroslav.kovac@stuba.sk
  • Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50–372 Wrocław, Poland , marek.tlaczala@pwr.edu.pl
Bibliografia
  • [1] W. Shockley and H. J. Queissery, “Detailed Balance Limit of Efficiency of p-n Junction Solar Cells,” J. Appl. Phys., vol. 32, pp. 510–519, 1961.
  • [2] G. Conibeer, “Third-generation photovoltaics”, Materials Today, vol. 10, pp. 42-50, 2007.
  • [3] S. P. Philipps et al., “Present Status in the Development of III-V Multi-Junction Solar Cells”, in Next Generation of Photovoltaics, A. Cristobal, A. Marti Vega, L. Luque (eds), Springer Series in Optical Sciences, Vol. 165, pp. 1-22, 2012.
  • [4] C. B. Honsberg, S. P. Bremner and R. Corkish, “Design trade-offs and rules for multiple energy level solar cells”, Physica E: Low-dimensional Systems and Nanostructures, vol. 14, pp. 136-141, 2007.
  • [5] T. Trupke, M. A. Green and P. Würfel., “ Improving solar cell efficiencies by down-conversion of high-energy photons”, J. Appl. Phys., vol. 92, pp. 1668-1674, 2002.
  • [6] H.-Q. Wang et al., “Rare-Earth Ion Doped Up-Conversion Materials for Photovoltaic Applications,” Advanced Materials, vol. 23, pp. 2675-2680, 2011.
  • [7] H. A. Atwater and A. Polman, “Plasmonics for improved photovoltaic devices,” Nature Materials, vol. 9, pp. 205-213, 2002.
  • [8] R. T. Ross and A. Nozik, “Efficiency of hot-carrier solar energy converters,” J. Appl. Phys., vol. 53, pp. 3813-3818, 1982.
  • [9] M. Weyers, M. Sato and H. Ando, “Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers,” Jpn. J. Appl. Phys, vol. 31(7A), pp. L853-L855, 1992.
  • [10] M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki and Y. Yazawa, “GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance ,” Jpn. J. Appl. Phys, vol. 35, pp. 1273-1275, 1996.
  • [11] B. Ściana et al., “Influence of the AP MOVPE process parameters on properties of (In, Ga)(As, N)/ GaAs heterostructures for photovoltaic applications,” Proceedings of SPIE, vol. 8902, pp. 89020J-1 – 89020J-8, 2013.
  • [12] B. Ściana et al., “MOVPE growth of AIIIBV-N semiconductor compounds for photovoltaic applications,” Cryst. Res. Technol., vol. 47, pp. 313-320, 2012.
  • [13] D. Radziewicz et al., “Influence of the MOVPE growth parameters on the properties of InGaAsN/GaAs MQW structures for solar cells application,” ASDAM 2012 - Conference Proceedings: The 9th International Conference on Advanced Semiconductor Devices and Microsystems, pp. 123-126, 2012.
  • [14] “PN4300PC Electrochemical C-V Profiler with Photovoltage Spectroscopy,” Operating Manual, Accent Semiconductor Technologies Inc. issue 2, September 2000.
  • [15] F. H. Pollack and H. Shen, “Photoreflectance characterization of semiconductors and semiconductor heterostructures,” Journal of Electronic Materials, vol. 19, pp. 399-406, 1990.
  • [16] J. Misiewicz, P. Sitarek, G. Sek and R. Kudrawiec, “Semiconductor heterostructures and device structures investigated by photoreflectance spectroscopy,” Materials Science- Poland, vol. 21, pp. 263-320, 2003.
  • [17] E. Canovas et al., “Photoreflectance analysis of a GaInP/GaInAs/Gemultijunction solar cell ,” Appl. Phys. Lett., vol. 97, pp. 203504(1)-203504(3), 2010.
  • [18] J. Gray, “The Physics of the Solar Cell,” in Handbook of Photovoltaic Science and Engineering, Second Edition, A. Luque and S. Hegedus (eds), John Wiley & Sons, pp. 82-129, 2011.
Typ dokumentu
Bibliografia
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