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2014 | 12 | 8 | 559-564
Tytuł artykułu

Study of the surface relaxation and single vacancy formation in very thin Cu (001) film by using MAEAM

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Języki publikacji
EN
Abstrakty
EN
The surface relaxation and the formation of a single vacancy in very thin Cu (001) film formed by 2 ∼ 14 atomic layers have been studied by using MAEAM and MD simulation. For the surface relaxtion, the highest surface energy is in the l = 2 atomic layers. The multilayer relaxation mainly occurs between the first two atomic layers, and the maximum contractive displacement is obtained in the very thin Cu (001) film formed by l = 3 atomic layers. For the vacancy formed in l′ = 1 of the very thin Cu (001) film formed by l = 2 ∼ 14 layers, the most difficult site in the film formed by l = 3 atomic layers.
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Wydawca

Czasopismo
Rocznik
Tom
12
Numer
8
Strony
559-564
Opis fizyczny
Daty
wydano
2014-08-01
online
2014-07-20
Twórcy
autor
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-014-0489-0
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