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2013 | 11 | 12 | 1680-1685
Tytuł artykułu

Structural and electronic properties of zincblende phase of TlxGa1−x AsyP1−y quaternary alloys: First-principles study

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Using the first-principles band-structure method, we have calculated the structural and electronic properties of zincblende TlAs, TlP, GaAs and GaP compounds and their new semiconductor TlxGa1−x AsyP1−y quaternary alloys. Structural properties of these semiconductors are obtained with the Perdew and Wang local-density approximation. The lattice constants of TlxGa1−x As, TlxGa1−x P ternary and TlxGa1−x AsyP1−y quaternary alloys were composed by Vegard’s law. Our investigation on the effect of the doping (Thallium and Arsenic) on lattice constants and band gap shows a non-linear dependence for TlxGa1−x AsyP1−y quaternary alloys. The band gap of TlxGa1−x AsyP1−y , E g(x, y) concerned by the compositions x and y. To our awareness, there is no theoretical survey on TlxGa1−x AsyP1−y quaternary alloys and needs experimental verification.
Wydawca

Czasopismo
Rocznik
Tom
11
Numer
12
Strony
1680-1685
Opis fizyczny
Daty
wydano
2013-12-01
online
2013-12-20
Twórcy
  • Physics Department, Faculty of Sciences, Yüzüncü Yıl University, 65080, Van, Turkey, sinemerden@gmail.com
autor
  • Physics Department, Faculty of Sciences, Yüzüncü Yıl University, 65080, Van, Turkey
  • Physics Department, Faculty of Sciences, Yüzüncü Yıl University, 65080, Van, Turkey
autor
  • Physics Department, Faculty of Sciences, Yüzüncü Yıl University, 65080, Van, Turkey
  • Physics Department, Faculty of Sciences, Yüzüncü Yıl University, 65080, Van, Turkey
autor
  • Physics Department, Faculty of Sciences, Yüzüncü Yıl University, 65080, Van, Turkey, harunakkus@yyu.edu.tr
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-013-0314-1
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