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2013 | 11 | 2 | 251-257
Tytuł artykułu

Structural properties of transparent Ti-V oxide semiconductor thin films

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Transparent oxide semiconducting thin films based on mixed Ti-V oxides were prepared using a modified reactive magnetron sputtering method. Based on structural investigations performed with the help of x-ray diffraction and transmission electron microscopy analysis, two distinct regions in the prepared thin film have been observed: a nanocrystalline TiO2-V2O3-V2O5 mixed composition, and a thin layer consisting of amorphous phase and nanocystalline TiO2 phase deposited directly at the substrate. Optical measurements show excellent transmission in the visible spectral range of 73%, on average. Resistivity of the thin film was found at the order of 105 Ω cm at room temperature. The preparation of mixed Ti-V oxides provides a combination of high transparency and semiconducting properties.
Wydawca

Czasopismo
Rocznik
Tom
11
Numer
2
Strony
251-257
Opis fizyczny
Daty
wydano
2013-02-01
online
2013-02-09
Twórcy
  • Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-370, Wroclaw, Poland, karolina.sieradzka@pwr.wroc.pl
  • Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-370, Wroclaw, Poland
  • Institute of Metallurgy and Materials Science, Reymonta 25, 30-059, Krakow, Poland
  • Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-370, Wroclaw, Poland
  • Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-370, Wroclaw, Poland
  • Karkonosze State Higher School, Lwowecka 18, 58-503, Jelenia Gora, Poland
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-012-0150-8
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