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2012 | 10 | 5 | 1178-1182
Tytuł artykułu

Local capacitance analysis using a modified deep level spectrometer

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
A bimorph-based xz scanner and an amplifier, increasing the capacitance and current measurement sensitivities 250-times and 1000-times, respectively, have been built into the cryostat of a deep level transient spectrometer. The setup renders point by point local capacitance-voltage (C–V) at 1 MHz and dc currentvoltage (I–V) measurements using a sharp tip placed into tunnelling distance from the surface of analysed semiconductor sample. The C–V measurements revealed a strong dependence on the probe/sample separation, ranging from MOS-type at small tunnelling currents to Schottky-type at currents exceeding approximately 10 pA. Marked hysteresis was observed, indicating changes of surface state occupancy. These slow states are otherwise hardly detected, since they are absent in semiconductor/metal contacts and in MOS structures they would become mostly passivated interface states. The setup enables calibrated, fixed zero level capacitance measurement. The stray capacitance is the dominant component of the measured capacitance but it can be easily discarded.
Wydawca

Czasopismo
Rocznik
Tom
10
Numer
5
Strony
1178-1182
Opis fizyczny
Daty
wydano
2012-10-01
online
2012-11-21
Twórcy
  • Hungarian Academy of Sciences Research Institute for Technical Physics and Materals Science, P.O.B. 49, H-1525, Budapest, Hungary
  • Institute of Physics, SAS Bratislava, Dubravska cesta 9, 845 11, Bratislava 45, Slovakia, lanyi@savba.sk
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-012-0107-y
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