Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN

• Autorzy: Ozlem Celik , Engin Tiras , Sukru Ardali , Sefer Lisesivdin , Ekmel Ozbay
• Języki publikacji: EN

Abstrakty

EN

The longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined from temperature-dependent Hall effect measurements and also from Infrared (IR) spectroscopy and Raman spectroscopy. The Hall effect measurements on AlGaN/GaN heterostructures grown by MOCVD have been carried out as a function of temperature in the range 1.8-275 K at a fixed magnetic field. The IR and Raman spectroscopy measurements have been carried out at room temperature. The experimental data for the temperature dependence of the Hall mobility were compared with the calculated electron mobility. In the calculations of electron mobility, polar optical phonon scattering, ionized impurity scattering, background impurity scattering, interface roughness, piezoelectric scattering, acoustic phonon scattering and dislocation scattering were taken into account at all temperatures. The result is that at low temperatures interface roughness scattering is the dominant scattering mechanism and at high temperatures polar optical phonon scattering is dominant.

Słowa kluczowe

EN

Hall effect; LO phonon energy; AlGaN/GaN; Raman spectra; infrared spectra

• Czasopismo: Open Physics
• Rocznik: 2012
• Tom: 10
• Numer: 2
• Strony: 485-491

Daty

wydano

2012-04-01

online

2012-03-31

Twórcy

autor

Ozlem Celik

• Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, 26470, Eskisehir, Turkey,

autor

Engin Tiras

• Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, 26470, Eskisehir, Turkey

autor

Sukru Ardali

• Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, 26470, Eskisehir, Turkey

autor

Sefer Lisesivdin

• Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar, 06500, Ankara, Turkey

autor

Ekmel Ozbay

• Nanotechnology Research Center, Department of Physics, and Department of Electrical and Electronics Engineering, Bilkent University, Ankara, Turkey

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Identyfikatory

DOI

10.2478/s11534-011-0100-x