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2012 | 10 | 1 | 210-217
Tytuł artykułu

Study of density of interface states in MOS structure with ultrathin NAOS oxide

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The quality of the interface region in a semiconductor device and the density of interface states (DOS) play important roles and become critical for the quality of the whole device containing ultrathin oxide films. In the present study the metal-oxide-semiconductor (MOS) structures with ultrathin SiO2 layer were prepared on Si(100) substrates by using a low temperature nitric acid oxidation of silicon (NAOS) method. Carrier confinement in the structure produces the space quantization effect important for localization of carriers in the structure and determination of the capacitance. We determined the DOS by using the theoretical capacitance of the MOS structure computed by the quantum mechanical approach. The development of the density of SiO2/Si interface states was analyzed by theoretical modeling of the C-V curves, based on the superposition of theoretical capacitance without interface states and additional capacitance corresponding to the charges trapped by the interface states. The development of the DOS distribution with the passivation procedures can be determined by this method.
Słowa kluczowe
Wydawca

Czasopismo
Rocznik
Tom
10
Numer
1
Strony
210-217
Opis fizyczny
Daty
wydano
2012-02-01
online
2011-12-03
Twórcy
  • DEF FEE Žilina University, Nálepku 1390, 03101, Liptovský Mikuláš, Slovakia, jurecka@lm.uniza.sk
  • DSMP ISIR Osaka University, Mihogaoka 8-1, Ibaraki, Osaka, 567-0047, Japan
  • DSMP ISIR Osaka University, Mihogaoka 8-1, Ibaraki, Osaka, 567-0047, Japan
  • DSMP ISIR Osaka University, Mihogaoka 8-1, Ibaraki, Osaka, 567-0047, Japan
  • Institute of Physics SAS, Dúbravská cesta 9, 84511, Bratislava, Slovakia
Bibliografia
  • [1] S. Jurečka et al., Appl. Surf. Sci. 256, 5623 (2010) http://dx.doi.org/10.1016/j.apsusc.2010.03.030[Crossref]
  • [2] E. Pinčik et al., Cent. Eur. J. Phys. 5, 428 (2007) http://dx.doi.org/10.2478/s11534-007-0019-4[Crossref]
  • [3] Y. Yamashita, K. Namba, Y. Nakato, Y. Nishioka, H. Kobayashi, J. Appl. Phys. 79, 7051 (1996) http://dx.doi.org/10.1063/1.361472[Crossref]
  • [4] H. Kobayashi, T. Sakurai, Y. Yamashita, T. Kuboto, O. Maida, M. Takahashi, Appl. Surf. Sci. 252, 7700 (2006) http://dx.doi.org/10.1016/j.apsusc.2006.03.055[Crossref]
  • [5] S. Mizushima, S. Imai, T. M. Asuha, M. Tanaka, H. Kobayashi, Appl. Surf. Sci. 254, 3685 (2008) http://dx.doi.org/10.1016/j.apsusc.2007.10.103[Crossref]
  • [6] S. Imai, S. Mizushima, T. M. Asuha, W. -B. Kim, H. Kobayashi, Appl. Surf. Sci. 254, 8054 (2008) http://dx.doi.org/10.1016/j.apsusc.2008.03.025[Crossref]
  • [7] M. Takahashi, Y.-L. Liu, H. Narita, H. Kobayashi, Appl. Surf. Sci. 254, 3715 (2008) http://dx.doi.org/10.1016/j.apsusc.2007.10.090[Crossref]
  • [8] S. Jurečka, I. Jamnicky, Communications 2, 58 (2010)
  • [9] S. Sze, K. K. Ng, Principles of semiconductor devices (J. Willey, New Jersey, 2000)
  • [10] W. Monch, Semiconductor surfaces and interfaces (Springer, Berlin, 2001)
  • [11] L. Hedin, B. I. Lundqvist, J. Phys. C 4, 2064 (1971) http://dx.doi.org/10.1088/0022-3719/4/14/022[Crossref]
  • [12] H. Kobayashi et al., Appl. Surf. Sci. 252, 7700 (2006) http://dx.doi.org/10.1016/j.apsusc.2006.03.055[Crossref]
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-011-0092-6
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