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2012 | 10 | 1 | 218-224
Tytuł artykułu

Study of diamond film nucleation by ultrasonic seeding in different solutions

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
In this study we have investigated diamond nucleation on Si substrates by ultrasonic seeding with different liquid solutions of Ultradispersed Detonation Diamond (UDD) powder in a mixture of metal nano- or microparticles (Ni, Co, Y). The influence of different solutions on nucleation efficiency was investigated. For highlighting nucleation centers and better evaluation of the nucleation process the nucleated samples were moved into a Microwave Plasma Enhanced Chemical Vapor Deposition (MW CVD) reactor and a ”short-time” (10 min), then followed by a ”long-time” (+1 hour), diamond deposition was performed. The morphology of samples was characterized by Scanning Electron Microscopy (SEM) and the chemical composition of grown diamond layer was investigated by Raman Spectroscopy. From the measurements we found out that microsized metal particles positively influenced nucleation and the uniformity of the deposited diamond thin film. The lowest surface roughness was achieved in the case of nanodiamond powder mixed with Co and Y metal powder. The influence of Ni, Co and Y to the nucleation and early growth stage are discussed.
Słowa kluczowe
Wydawca

Czasopismo
Rocznik
Tom
10
Numer
1
Strony
218-224
Opis fizyczny
Daty
wydano
2012-02-01
online
2011-12-03
Twórcy
  • Faculty of Electrical Engineering and Informaton Technology, Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovak Republic, marian.varga@stuba.sk
autor
  • Institute of Physics AS CR, v.v.i., Cukrovarnicka 10, CZ-16253, Praha 6, Czech Republic
  • Institute of Physics AS CR, v.v.i., Cukrovarnicka 10, CZ-16253, Praha 6, Czech Republic
  • Faculty of Electrical Engineering and Informaton Technology, Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovak Republic
  • Institute of Physics AS CR, v.v.i., Cukrovarnicka 10, CZ-16253, Praha 6, Czech Republic
  • International Laser Center, Ilkovičova 3, 812 19, Bratislava, Slovak Republic
Bibliografia
  • [1] O. A. Williams et al., Diam. Relat. Mater. 17, 1080 (2008) http://dx.doi.org/10.1016/j.diamond.2008.01.103[Crossref]
  • [2] P. Kulha et al., Vacuum 84, 53 (2009) http://dx.doi.org/10.1016/j.vacuum.2009.04.023[Crossref]
  • [3] L. Michalikova, B. Rezek, A. Kromka, M. Kalbacova, Vacuum 84, 61 (2009) http://dx.doi.org/10.1016/j.vacuum.2009.04.016[Crossref]
  • [4] J. E. Butler, A. V. Sumant, Chem. Vapor. Depos. 14, 145 (2008) http://dx.doi.org/10.1002/cvde.200700037[Crossref]
  • [5] T. Ižák, M. Marton, M. Varga, M. Vojs, M. Veselý, R. Redhammer, M. Michalka, Vacuum 84, 49 (2009) http://dx.doi.org/10.1016/j.vacuum.2009.04.065[Crossref]
  • [6] A. Kromka et al., Thin Solid Films 433, 73 (2003) http://dx.doi.org/10.1016/S0040-6090(03)00288-8[Crossref]
  • [7] O. A. Williams et al., Chem. Phys. Lett. 445, 255 (2007) http://dx.doi.org/10.1016/j.cplett.2007.07.091[Crossref]
  • [8] A. V. Sumant et al., Diam. Relat. Mater. 16, 718 (2007) http://dx.doi.org/10.1016/j.diamond.2006.12.011[Crossref]
  • [9] O. A. Williams et al., ACS Nano, 4, 4824 (2010) http://dx.doi.org/10.1021/nn100748k[Crossref]
  • [10] A. Kromka et al., Chem. Vapor. Depos. 14, 181 (2008) http://dx.doi.org/10.1002/cvde.200706662[Crossref]
  • [11] A. Kromka et al., Diam. Relat. Mater. 18, 734 (2009) http://dx.doi.org/10.1016/j.diamond.2009.01.023[Crossref]
  • [12] S. Rotter et al. (Eds.), Proceedings of the applied diamond conference/frontier carbon technologies-ADC/FCT ′99, vol. 25 (MYU K.K., Tokyo, 1999)
  • [13] A. Kromka et al., Adv. Eng. Inform. 7, 11 (2009)
  • [14] J. G. Buijnsters, L. Vazquez, J. J. ter Meulen, Diam. Relat. Mater. 18, 1239 (2009) http://dx.doi.org/10.1016/j.diamond.2009.04.007[Crossref]
  • [15] Z. Z. Liang et al., Diam. Relat. Mater. 14, 243 (2005) http://dx.doi.org/10.1016/j.diamond.2004.12.024[Crossref]
  • [16] J. L. Kang et al., J. Alloy. Compd. 456, 290 (2008) http://dx.doi.org/10.1016/j.jallcom.2007.02.078[Crossref]
  • [17] C.-T. Hsieh, Yi-T. Lin, J.-Y. Lin, J.-L. Wei, Mater. Chem. Phys. 114, 702 (2009) http://dx.doi.org/10.1016/j.matchemphys.2008.10.034[Crossref]
  • [18] F. Klauser, D. Steinmüller-Nethl, R. Kaindl, E. Bertel, N. Memmel, Chem. Vapor. Depos. 16, 127 (2010) http://dx.doi.org/10.1002/cvde.200906827[Crossref]
  • [19] Y. Tang, Y. S. Li, Q. Yang, A. Hirose, Thin Solid Films 519, 1606 (2010) http://dx.doi.org/10.1016/j.tsf.2010.07.110[Crossref]
  • [20] M. Zhang, H. Yan, F. Peng, J. Mater. Sci. Technol. 24, 809 (2008) http://dx.doi.org/10.1179/026708307X231542[Crossref]
  • [21] C.-C. Teng et al., J. Nanomater. 2010, 365614 (2010) http://dx.doi.org/10.1155/2010/365614[Crossref]
  • [22] J. Hees, A. Kriele, O. A. Williams, Chem. Phys. Lett. 509, 12 (2011) http://dx.doi.org/10.1016/j.cplett.2011.04.083[Crossref]
Typ dokumentu
Bibliografia
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Identyfikator YADDA
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