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2011 | 9 | 6 | 1472-1481
Tytuł artykułu

Effect of wet-chemical substrate smoothing on passivation of ultrathin-SiO2/n-Si(111) interfaces prepared with atomic oxygen at thermal impact energies

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Ultrathin SiO2 layers for potential applications in nano-scale electronic and photovoltaic devises were prepared by exposure to thermalized atomic oxygen under UHV conditions. Wet-chemical substrate pretreatment, layer deposition and annealing processes were applied to improve the electronic Si/SiO2 interface properties. This favourable effect of optimized wet-chemical pre-treatment can be preserved during the subsequent oxidation. The corresponding atomic-scale analysis of the electronic interface states after substrate pre-treatment and the subsequent silicon oxide layer formation is performed by field-modulated surface photovoltage (SPV), atomic force microscopy (AFM) and spectroscopic ellipsometry in the ultraviolet and visible region (UV-VIS-SE).
Wydawca

Czasopismo
Rocznik
Tom
9
Numer
6
Strony
1472-1481
Opis fizyczny
Daty
wydano
2011-12-01
online
2011-10-15
Twórcy
autor
  • Helmholtz-Zentrum Berlin, Institut für Silizium-Photovoltaik, Kekuléstraße 5, 12489, Berlin, Germany
  • Hochschule für Technik und Wirtschaft (HTW), Wilhelminenhofstr. 75a, 12459, Berlin, Germany
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-011-0053-0
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