PL EN


Preferencje help
Widoczny [Schowaj] Abstrakt
Liczba wyników
Czasopismo
2011 | 9 | 5 | 1301-1308
Tytuł artykułu

Influence of deposition temperature on amorphous structure of PECVD deposited a-Si:H thin films

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The effect of deposition temperature on the structural and optical properties of amorphous hydrogenated silicon (a-Si:H) thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane diluted with hydrogen was under study. The series of thin films deposited at the deposition temperatures of 50–200°C were inspected by XRD, Raman spectroscopy and UV Vis spectrophotometry. All samples were found to be amorphous with no presence of the crystalline phase. Ordered silicon hydride regions were proved by XRD. Raman measurement analysis substantiated the results received from XRD showing that with increasing deposition temperature silicon-silicon bond-angle fluctuation decreases. The optical characterization based on transmittance spectra in the visible region presented that the refractive index exhibits upward trend with increasing deposition temperature, which can be caused by the densification of the amorphous network. We found out that the scale factor of the Tauc plot increases with the deposition temperature. This behaviour can be attributed to the increasing ordering of silicon hydride regions. The Tauc band gap energy, the iso-absorption value their difference were not particularly influenced by the deposition temperature. Improvements of the microstructure of the Si amorphous network have been deduced from the analysis.
Słowa kluczowe
Wydawca

Czasopismo
Rocznik
Tom
9
Numer
5
Strony
1301-1308
Opis fizyczny
Daty
wydano
2011-10-01
online
2011-09-15
Twórcy
  • Department of Engineering Fundamentals, Faculty of Electrical Engineering, University of Žilina, ul. kpt. J. Nálepku 1390, 031 01, Liptovský Mikuláš, Slovakia, mullerova@lm.uniza.sk
  • Delft Institute of Microsystems and Nanoelectronics (DIMES), Delft University of Technology, 2628 CT, Delft, The Netherlands
  • New Technologies — Research Center, University of West Bohemia, Univerzitní 8, 306 14, Plzeň, Czech Republic
autor
  • Delft Institute of Microsystems and Nanoelectronics (DIMES), Delft University of Technology, 2628 CT, Delft, The Netherlands
autor
  • New Technologies — Research Center, University of West Bohemia, Univerzitní 8, 306 14, Plzeň, Czech Republic
Bibliografia
  • [1] C.W. Wronski, R.W. Collins, Sol. Energy 77, 877 (2004) http://dx.doi.org/10.1016/j.solener.2004.03.008[Crossref]
  • [2] R.W. Collins et al., Sol. Energ. Mat. Sol. C. 78, 143 (2003) http://dx.doi.org/10.1016/S0927-0248(02)00436-1[Crossref]
  • [3] G. van Elzakker, V. Nádaždy, F.D. Tichelaar, J.W. Metselaar, M. Zeman, Thin Solid Films 511–512, 252 (2006) http://dx.doi.org/10.1016/j.tsf.2005.12.133[Crossref]
  • [4] P. Chaudhurietal., J. Non-Cryst. Solids 338–340, 236 (2004) http://dx.doi.org/10.1016/j.jnoncrysol.2004.02.061[Crossref]
  • [5] M. Zeman, G. van Elzakker, F. D. Tichelaar, P. Šutta, Philos. Mag. 89, 2435 (2009) http://dx.doi.org/10.1080/14786430902960137[Crossref]
  • [6] D.L. Williamson, Mater. Res. Soc. Symp. P. 557, 251 (1999) http://dx.doi.org/10.1557/PROC-557-251[Crossref]
  • [7] A. Fontcuberta i Morral, P. Roca i Cabarrocas, C. Clerc, Phys. Rev. B69, 125307 (2004)
  • [8] J. Müllerová, L. Prušáková, M. Netrvalová, V. Vavruňková, P. Šutta, Appl. Surf. Sci. 256, 5667 (2010) http://dx.doi.org/10.1016/j.apsusc.2010.03.022[Crossref]
  • [9] I. Chambouleyron, J.M. Martinez, A.C. Moretti, M. Mulato, Appl. Optics 36, 8238 (1997) http://dx.doi.org/10.1364/AO.36.008238[Crossref]
  • [10] G.E. Jellison Jr., F.A. Modine, Appl. Phys. Lett. 69, 371 (1996) http://dx.doi.org/10.1063/1.118064[Crossref]
  • [11] G.E. Jellison Jr., F.A. Modine, Appl. Phys. Lett. 69, 2137 (1996) http://dx.doi.org/10.1063/1.118155[Crossref]
  • [12] W.M.M. Kessels, J.P.M. Hoefnagels, E. Lagereis, M.C.M. van de Sanden, Thin Solid Films 501, 88 (2006) http://dx.doi.org/10.1016/j.tsf.2005.07.113[Crossref]
  • [13] J. Müllerová, V. Vavruňková, P. Šutta, Cent. Eur. J. Phys. 7, 315 (2009) http://dx.doi.org/10.2478/s11534-009-0023-y[Crossref]
  • [14] J.P. Condeetal., J. Appl. Phys. 85, 3327 (1999) http://dx.doi.org/10.1063/1.369679[Crossref]
  • [15] A.R. Zanatta, I. Chambouleyron, Phys. Rev. B53, 3833 (1996)
  • [16] D.K. Basa, Thin Solid Films 406, 75 (2002) http://dx.doi.org/10.1016/S0040-6090(01)01781-3[Crossref]
  • [17] D. Han, J.D. Lorentzen, J.R. Weinberg-Wolf, L.E. McNeil, J. Appl. Phys. 94, 2930 (2003) http://dx.doi.org/10.1063/1.1598298[Crossref]
  • [18] M. Sadiq, M. Shafiq, A. Waheed, R. Ahmad, M. Zakaullah, Phys. Lett. A352, 150 (2006)
  • [19] N.M. Liaoetal., Appl. Phys. A-Mater. 91, 349 (2008) http://dx.doi.org/10.1007/s00339-008-4413-6[Crossref]
  • [20] A.H.M. Smets, W.M.M. Kessels, M.C.M. van den Sanden, Appl. Phys. Lett. 82, 1547 (2003) http://dx.doi.org/10.1063/1.1559657[Crossref]
  • [21] Y. Ziegleretal., Sol. Energ. Mat. Sol. C. 66, 413 (2001) http://dx.doi.org/10.1016/S0927-0248(00)00202-6[Crossref]
  • [22] B. Stannowski, R.E.I. Schropp, Thin Solid Films 383, 125 (2001) http://dx.doi.org/10.1016/S0040-6090(00)01583-2[Crossref]
  • [23] W. Yuetal., Sci. China Ser. A53, 807 (2010)
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-011-0041-4
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.