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2011 | 9 | 4 | 1114-1121
Tytuł artykułu

Simulations of AlGaAs/GaAs heterojunction phototransistors

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Heterojunction bipolar phototransistors, based on GaAs technology, are widely used in optoelectronic integrated circuits. One of the methods to improve phototransistor performance is applying a delta-doped thin base, which causes both a higher current gain and a better time response. There is a lack of information about this kind of device in the literature. Our work presents the results of computer simulations of AlGaAs/GaAs n-p-n phototransistors, with a bulk-doped and delta-doped base working as two- and threeterminal devices. The characteristics and device parameters obtained clearly show that phototransistors with delta-doped base have higher sensitivity and a better time response compared to the structures with a bulk-doped base. Based on simulation results, we modified the epitaxial phototransistor structure with a double delta-doped base that should improve device performance.
Wydawca

Czasopismo
Rocznik
Tom
9
Numer
4
Strony
1114-1121
Opis fizyczny
Daty
wydano
2011-08-01
online
2011-04-30
Twórcy
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland, Beata.Sciana@pwr.wroc.pl
autor
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-011-0023-6
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