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2011 | 9 | 2 | 276-286
Tytuł artykułu

Magnetic and electric properties of (Fe, Co)/(Si, Ge) multilayers

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
We review selected results concerning the interlayer exchange coupling in Fe/SixFe1−x , Fe/Ge and Co/Si layered structures. Among the ferromagnet/semiconductor systems, Fe/Si structures are the most popular owing to their strong antiferromagnetic interlayer coupling. We show that such interaction depends not only on semiconducting sublayer thickness, but also on deposition techniques and on the chemical composition of the sublayer as well. In similar heterostructures e.g. Fe/Ge, antiferromagnetic coupling was observed only in ion-beam deposited trilayers at low temperatures. In contrast, in Fe/Ge multilayers deposited by sputtering, no such coupling was found. However, when the Ge is partially substituted by Si, antiferromagnetic interlayer coupling appears. For Co/Si multilayers, we observed a very weak exchange coupling and its oscillatory behavior. The growth of Co on Si occurs in an island growth mode. The evolution of magnetic loop shapes can be successfully explained by the interplay between interlayer coupling and anisotropy terms.
Wydawca

Czasopismo
Rocznik
Tom
9
Numer
2
Strony
276-286
Opis fizyczny
Daty
wydano
2011-04-01
online
2011-02-20
Twórcy
  • Institute of Molecular Physics Polish Academy of Sciences, Mariana Smoluchowskiego 17, 60-179, Poznan, Poland
  • Institute of Molecular Physics Polish Academy of Sciences, Mariana Smoluchowskiego 17, 60-179, Poznan, Poland
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-010-0145-2
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