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2011 | 9 | 2 | 404-409
Tytuł artykułu

Creation of high resolution pattern by nanoscratching

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The lithography is a basic microelectronic process which determines properties of fabricated device. The resolution of optical lithography applied nowadays is insufficient for creating high resolution patterns such as gate electrode in transistors. The scaling ability is the major motivation for undertaking experiments to elaborate high resolution lithography techniques. The atomic force microscope (AFM) is commonly used as tool for creation patterns in sub-micrometers resolution. In this paper, the results of simulations of electromagnetic field behavior during passing the gap with a size smaller than the wavelength of the optical lithography light source are presented. Also results of the nanoscratching lithography prepared for various parameters of force that are applied to the tip are summarized.
Słowa kluczowe
Wydawca

Czasopismo
Rocznik
Tom
9
Numer
2
Strony
404-409
Opis fizyczny
Daty
wydano
2011-04-01
online
2011-02-20
Twórcy
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17 Street, 50-372, Wrocław, Poland
autor
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17 Street, 50-372, Wrocław, Poland
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17 Street, 50-372, Wrocław, Poland
autor
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17 Street, 50-372, Wrocław, Poland
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17 Street, 50-372, Wrocław, Poland
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370, Wrocław, Poland
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370, Wrocław, Poland
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17 Street, 50-372, Wrocław, Poland
Bibliografia
  • [1] X.N. Xie, H.J. Chung, C.H. Sow, A.T.S. Wee, Mater. Sci. Eng. R. 54, 1 (2006) http://dx.doi.org/10.1016/j.mser.2006.10.001[Crossref]
  • [2] Y.D. Yan, T. Sun, S. Dong, Wear 262, 477 (2007) http://dx.doi.org/10.1016/j.wear.2006.06.017[Crossref]
  • [3] Y.J. Chen, J.H. Hsu, H.N. Lin, Nanotechnology 16, 1112 (2005) http://dx.doi.org/10.1088/0957-4484/16/8/020[Crossref]
  • [4] S. Hu et al., J. Vac. Sci. Technol. B 16, 2822 (1998) http://dx.doi.org/10.1116/1.590277[Crossref]
  • [5] E. Dubois, J.L. Bubbendor, Solid State Electron. 43, 1085 (1999) http://dx.doi.org/10.1016/S0038-1101(99)00029-5[Crossref]
  • [6] R. Magno, B.R. Bennett, Appl. Phys. Lett. 70, 1855 (1997) http://dx.doi.org/10.1063/1.118712[Crossref]
  • [7] X. Li, P. Nardi, C. Beak, J. Kim, Y. Kim, J. Micromech. Microeng. 15, 551 (2005) http://dx.doi.org/10.1088/0960-1317/15/3/016[Crossref]
  • [8] X. Li, X. Wang, Q. Xiong, P. Eklund, Appl. Phys. Lett. 87, 233113 (2005) http://dx.doi.org/10.1063/1.2139991[Crossref]
  • [9] M. Ramiączek-Krasowska, A. Szyszka, J. Prażmowska, R. Paszkiewicz, M. Tłaczała, Opt. Appl. 39, 711 (2009)
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-010-0115-8
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