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2011 | 9 | 2 | 410-416
Tytuł artykułu

Modifying of etching anisotropy of silicon substrates by surface active agents

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The influence of alcohol additives on etch rate anisotropy of Si(hkl) planes has been studied. The etching processes were carried out in 3 and 5 M KOH aqueous solutions saturated and non-saturated with alcohols. Isopropanol, 1-propanol and tert-butanol were examined. It has been showed that the etching process cannot be controlled only by the surface tension of the solution. Saturation of the etching solution with alcohols modifies etch rate anisotropy, lowering the ratio of the etch rate of (110) and vicinal planes to the etch rate of (100) plane. The morphology of Si(hkl) planes etched in 3 M KOH solution saturated with tert-butyl alcohol has been studied in detail. Smooth (331) and (221) planes have been achieved in this solution. The (100) plane turned out to be densely covered by hillocks, opposite to the (100) plane etched in weak-alkaline solution saturated with isopropanol. To explain this phenomenon, the mechanism of hillocks formation on Si(100) surface has been proposed.
Słowa kluczowe
Wydawca

Czasopismo
Rocznik
Tom
9
Numer
2
Strony
410-416
Opis fizyczny
Daty
wydano
2011-04-01
online
2011-02-20
Twórcy
  • Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372, Wroclaw, Poland, krzysztof.rola@pwr.wroc.pl
autor
  • Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372, Wroclaw, Poland
Bibliografia
  • [1] D. Resnik et al., J. Micromech. Microeng. 15, 1174 (2005) http://dx.doi.org/10.1088/0960-1317/15/6/007[Crossref]
  • [2] I. Zubel, M. Kramkowska, Sensor. Actuat. A-Phys. 115, 549 (2004) http://dx.doi.org/10.1016/j.sna.2003.11.010[Crossref]
  • [3] I. Zubel, M. Kramkowska, Sensor. Actuat. A-Phys. 101, 255 (2002) http://dx.doi.org/10.1016/S0924-4247(02)00265-0[Crossref]
  • [4] I. Zubel, M. Kramkowska, Sensor. Actuat. A-Phys. 93, 138 (2001) http://dx.doi.org/10.1016/S0924-4247(01)00648-3[Crossref]
  • [5] I. Zubel, M. Kramkowska, Acta Phys. Pol. A 116, S–105 (2009)
  • [6] P. Pal et al., J. Microelectromech. S. 18, 1345 (2009)
  • [7] M.A. Gosálvez et al., J. Micromech. Microeng. 19, 125011 (2009) http://dx.doi.org/10.1088/0960-1317/19/12/125011[Crossref]
  • [8] W. Haiss et al., J. Electroanal. Chem. 597, 1 (2006) http://dx.doi.org/10.1016/j.jelechem.2006.07.027[Crossref]
  • [9] A.J. Nijdam et al., J. Appl. Phys. 89, 4113 (2001) http://dx.doi.org/10.1063/1.1352557[Crossref]
  • [10] E.A. Khizhnyak, A.V. Yukhnevich, Russ. J. Gen. Chem. 77, 1315 (2007) http://dx.doi.org/10.1134/S1070363207080014[Crossref]
  • [11] P.C. Hiemenz, In: J.J. Lagowski (Ed.), Principles of Colloid and Surface Chemistry, Second Edition, Revised and Expanded (Marcel Dekker, New York, 1986) 630
  • [12] J.N. Israelachvili, Intermolecular and Surface Forces: With Applications to Colloidal and Biological Systems (Academic Press, San Diego, 1985) 73
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-010-0114-9
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