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2011 | 9 | 3 | 729-739
Tytuł artykułu

New method and treatment technique applied to interband transition in GaAs1−x Px ternary alloys

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
In this paper we presented a new method (Eigen-Coordinates (ECs)) that can be used for calculations of the critical points (CPs) energy of the interband-transition edges of the heterostructures. This new method is more accurate and complete in comparison with conventional ones and has a wide range of application for the calculation of the fitting parameters related to nontrivial functions that initially have nonlinear fitting parameters that are difficult to evaluate. The new method was applied to determine the CPs energies from the dielectric functions of the MBE grown GaAs1−xPx ternary alloys obtained using spectroscopic ellipsometry (SE) measurements at room temperature in the 0.5-5 eV photon energy region. The obtained results are in good agreement with the results of the other methods.
Wydawca

Czasopismo
Rocznik
Tom
9
Numer
3
Strony
729-739
Opis fizyczny
Daty
wydano
2011-06-01
online
2011-02-26
Twórcy
  • Faculty of Physics, Magurele-Bucharest, Romania and National Mihail Sadoveanu High School, District 2, University of Bucharest, Bucharest, Romania
  • Theoretical Physics Department, Kazan State University, Kazan, 420008, Tataristan, Russia
autor
  • Faculty of Art and Sciences, Department of Physics, Gazi University, Teknikokullar, Ankara, 06500, Turkey
  • Faculty of Art and Sciences, Department of Mathematics and Computer Sciences, Çankaya University, Ankara, 06530, Turkey, dumitru@cankaya.edu.tr
  • Faculty of Art and Sciences, Department of Physics, Gazi University, Teknikokullar, Ankara, 06500, Turkey, sozcelik@gazi.edu.tr
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-010-0068-y
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