Atomic layer deposition of HfO2 on graphene from HfCl4 and H2O

• Autorzy: Harry Alles , Jaan Aarik , Aleks Aidla , Aurelien Fay , Jekaterina Kozlova , Ahti Niilisk , Martti Pärs , Mihkel Rähn , Maciej Wiesner , Pertti Hakonen , Väino Sammelselg
• Języki publikacji: EN

Abstrakty

EN

Atomic layer deposition of HfO2 on unmodified graphene from HfCl4 and H2O was investigated. Surface RMS roughness down to 0.5 nm was obtained for amorphous, 30 nm thick hafnia film grown at 180°C. HfO2 was also deposited in a two-step temperature process where the initial growth of about 1 nm at 170°C was continued up to 10–30 nm at 300°C. This process yielded uniform, monoclinic HfO2 films with RMS roughness of 1.7 nm for 10–12 nm thick films and 2.5 nm for 30 nm thick films. Raman spectroscopy studies revealed that the deposition process caused compressive biaxial strain in graphene, whereas no extra defects were generated. An 11 nm thick HfO2 film deposited onto bilayer graphene reduced the electron mobility by less than 10% at the Dirac point and by 30–40% far away from it.

Słowa kluczowe

EN

graphene; atomic layer depostion; high-k dielectric thin films; nanoelectronics

• Czasopismo: Open Physics
• Rocznik: 2011
• Tom: 9
• Numer: 2
• Strony: 319-324

Daty

wydano

2011-04-01

online

2011-02-20

Twórcy

autor

Harry Alles,

autor

Jaan Aarik

• Institute of Physics, University of Tartu, Tartu, 51014, Estonia

autor

Aleks Aidla

• Institute of Physics, University of Tartu, Tartu, 51014, Estonia

autor

Aurelien Fay

• Low Temperature Laboratory, Aalto University, Espoo, P.O. Box 15100, Finland

autor

Jekaterina Kozlova

autor

Ahti Niilisk

• Institute of Physics, University of Tartu, Tartu, 51014, Estonia

autor

Martti Pärs

• Institute of Physics, University of Tartu, Tartu, 51014, Estonia

autor

Mihkel Rähn

• Institute of Physics, University of Tartu, Tartu, 51014, Estonia

autor

Maciej Wiesner

autor

Pertti Hakonen

• Low Temperature Laboratory, Aalto University, Espoo, P.O. Box 15100, Finland

autor

Väino Sammelselg

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Identyfikatory

DOI

10.2478/s11534-010-0040-x