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2011 | 9 | 1 | 242-249
Tytuł artykułu

Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
A set of MOS structures with thin SiO2 layers prepared by nitric acid oxidation (NAOS) method was investigated using acoustic deep level transient spectroscopy (A-DLTS) to explain the role of annealing treatment (post-oxidation annealing (POA) and post-metallization annealing (PMA)) at different conditions on the distribution of interface states. The activation energies of interface states and the corresponding capture cross-section were calculated both from Arrhenius plots constructed for individual peaks of the A-DLTS spectra and applying the method of modeling of measured acoustic spectra. The energy distribution of the interface states was determined also from the dependence of acoustoelectric response signal (ARS) on the external bias voltage (U ac - V G curves). By comparing the A-DLTS spectra, U ac - V G characteristics and some electrical measurements (G-V, I-V curves) of investigated MOS structures with no treatment with those treated with POA and/or PMA, the role of individual treatments was observed. The definite decrease of the interface states in the structures with the PMA treatment in comparison with the POA treatment was confirmed too.
Wydawca

Czasopismo
Rocznik
Tom
9
Numer
1
Strony
242-249
Opis fizyczny
Daty
wydano
2011-02-01
online
2010-09-24
Twórcy
  • Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia, hockicko@fyzika.uniza.sk
autor
  • Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia
autor
  • Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia
  • Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
  • Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
  • Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-010-0038-4
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