Czasopismo
Tytuł artykułu
Autorzy
Warianty tytułu
Języki publikacji
Abstrakty
A new model is presented of current transport in Metal Insulator Metal (MIM) structures by quantum mechanical tunnelling. In addition to direct tunnelling through an insulating layer, tunnelling via defects present in the insulating layer plays an important role. Examples of the influence of the material and thickness of the insulating layer, energy distribution of traps, and metal work functions are also provided.
Czasopismo
Rocznik
Tom
Numer
Strony
230-241
Opis fizyczny
Daty
wydano
2011-02-01
online
2010-09-24
Twórcy
autor
- Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovakia, juraj.racko@stuba.sk
autor
- Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovakia
autor
- Technical University of Ilmenau, PF 98684, Ilmenau, Germany
autor
- Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovakia
autor
- Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovakia
autor
- Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovakia
autor
- Slovak University of Technology, Ilkovičova 3, 812 19, Bratislava, Slovakia
autor
- Technical University of Ilmenau, PF 98684, Ilmenau, Germany
autor
- Slovak Academy of Sciences, Dúbravská cesta 9, 841 04, Bratislava, Slovakia
Bibliografia
- [1] J. Frenkel, Phys. Rev. 54, 647 (1938) http://dx.doi.org/10.1103/PhysRev.54.647[Crossref]
- [2] S.M. Sze, J. Appl. Phys. 38, 2951 (1967) http://dx.doi.org/10.1063/1.1710030[Crossref]
- [3] S.M. Sze, Physics of Semiconductors Devices, second edition (John Wiley & Sons, New York, 1981)
- [4] A. Schenk, Solid State Electron. 35, 1585 (1992) http://dx.doi.org/10.1016/0038-1101(92)90184-E[Crossref]
- [5] G.A.M. Hurkx, D.B.M. Klaassen, M.P.G. Knuvers, IEEE T. Electron Dev. 39, 331 (1992) http://dx.doi.org/10.1109/16.121690[Crossref]
- [6] B. Eitan, A. Kolodny, Appl. Phys. Lett. 43, 106 (1983) http://dx.doi.org/10.1063/1.94145[Crossref]
- [7] D. Ielmini, A.S. Spinelli, A.L. Lacaita, A. Martinelli, G. Ghidini, Solid State Electron. 45, 1361 (2001) http://dx.doi.org/10.1016/S0038-1101(01)00173-3[Crossref]
- [8] D.M. Sathaiya, S. Karmalkar, IEEE T. Electron Dev. 55, 557 (2008) http://dx.doi.org/10.1109/TED.2007.912993[Crossref]
- [9] D.M. Sathaiya, S. Karmalkar, J. Appl. Phys. 99, 093701 (2006) http://dx.doi.org/10.1063/1.2191620[Crossref]
- [10] S. Karmalkar, D.M. Sathaiya, Appl. Phys. Lett. 82, 3976 (2003) http://dx.doi.org/10.1063/1.1579852[Crossref]
- [11] S. Karmalkar, N. Satyan, D.M. Sathaiya, IEEE Electr. Device L. 27, 87 (2006) http://dx.doi.org/10.1109/LED.2005.862672[Crossref]
- [12] J. Racko et al., In: J. Präšek, M. Adémek, I. Szendiuch (Eds.), 32nd International Spring Seminar on Electronics Technology, 13–17 May 2009, Brno, Czech Republic (Brno University of Technology, Brno, 2009) 256
- [13] J. Racko et al., Solid State Electron. 52, 1755 (2008) http://dx.doi.org/10.1016/j.sse.2008.07.009[Crossref]
- [14] J. Racko et al., J. Electr. Eng. 59, 81 (2008)
- [15] K. Fröhlich et al., J. Vac. Sci. Technol. B 27, 266 (2009) http://dx.doi.org/10.1116/1.3021030[Crossref]
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-010-0027-7