Czasopismo
Tytuł artykułu
Autorzy
Warianty tytułu
Języki publikacji
Abstrakty
The introduction of an ultrathin zinc oxide (ZnO) layer formed by the atomic layer deposition (ALD) technique was found to improve the operation parameters of nickel phthalocyanine (NiPc) based photovoltaic cells with a transparent bottom electrode, indium tin oxide (ITO). This improvement is attributed to several reasons, such as I) increase of photovoltaic yield in ITO/p-NiPc/n-ZnO/Al cells incorporating a hybrid heterojunction as compared to single-layer ITO/NiPc/Al cells, II) enhancement of the overall spectral response in the double-layer cells and III) extension of long-term operational stability.
Słowa kluczowe
Czasopismo
Rocznik
Tom
Numer
Strony
798-803
Opis fizyczny
Daty
wydano
2010-10-01
online
2010-07-22
Twórcy
autor
- Lviv Polytechnic National University, S. Bandera 12, Lviv, 79013, Ukraine
autor
- Institute for Physics of Microstructure of the Russian Academy of Sciences (IPM RAS), RF 603950, Nizhny Novgorod, GSP-15, Russia, pakhomov@ipm.sci-nnov.ru
autor
- Lviv Polytechnic National University, S. Bandera 12, Lviv, 79013, Ukraine
autor
- Lviv Polytechnic National University, S. Bandera 12, Lviv, 79013, Ukraine
autor
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668, Warsaw, Poland
autor
autor
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668, Warsaw, Poland
autor
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-009-0159-9