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2010 | 8 | 3 | 400-407
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Plasma treatment studies of MIS devices

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Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Silicon nitride films have emerged as the possible future dielectrics for ultra large scale integration (ULSI). Because the interface state density of silicon nitride/silicon interface in metal insulator semiconductor (MIS) configuration is more than an order of magnitude larger than that of silicon dioxide/silicon interface, plasma treatment studies on silicon nitride films have been undertaken for the possible improvement. Accordingly, silicon nitride films of various composition have been prepared by plasma enhanced chemical vapor deposition (PECVD) system using silane(SiH4) and ammonia(NH3) with nitrogen(N2) as the diluent and MIS devices have been fabricated with as well as without plasma treated silicon nitride as the insulator. A considerable improvement in the silicon nitride/silicon interface is observed on ammonia plasma treatment while nitrous oxide(N2O) plasma treatment studies have resulted in the establishment of a novel plasma oxidation process.
Wydawca

Czasopismo
Rocznik
Tom
8
Numer
3
Strony
400-407
Opis fizyczny
Daty
wydano
2010-06-01
online
2010-04-24
Twórcy
autor
  • Department of Physics, Utkal University, Bhubaneswar, 751004, India, basa@iopb.res.in
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-009-0095-8
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