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2009 | 7 | 4 | 813-820
Tytuł artykułu

Noise analysis of coaxial Schottky barrier carbon nanotube fets using non equilibrium Green’s function formalism

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The effect of noise on the performance of Schottky Barrier Carbon Nanotube Field Effect Transistors (SB-CNTFETs) has been investigated under various bias conditions. In order to calculate the noise power spectral density, the Non-Equilibrium Green’s Function formalism (NEGF) is used to obtain the transmission coefficient and the number of carriers inside the channel. Results are presented in two sections: In the first section the Hooge’s empirical rule is used to investigate the flicker noise properties of SB-CNTFETs with defects in the gate oxide region, while in the second section the thermal and shot noise properties of SB-CNTFETs are studied. Finally, the best bias points in the ON and OFF states have been suggested according to the total noise power spectral density and the device signal to noise ratio.
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Wydawca

Czasopismo
Rocznik
Tom
7
Numer
4
Strony
813-820
Opis fizyczny
Daty
wydano
2009-12-01
online
2009-07-21
Twórcy
  • Department of Electrical and Electronic Engineering, Shiraz University, Shiraz, Iran
  • Department of Electrical and Electronic Engineering, Shiraz University, Shiraz, Iran, rghayour@shirazu.ac.ir
autor
  • Department of Electrical and Electronic Engineering, Shiraz University, Shiraz, Iran
  • Department of Electrical and Electronic Engineering, Shiraz University, Shiraz, Iran
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-009-0051-7
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