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Czasopismo
2009 | 7 | 2 | 237-241
Tytuł artykułu

Acoustic spectroscopy and electrical characterization of SiO2/Si structures with ultrathin SiO2 layers formed by nitric acid oxidation

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Ultrathin silicon dioxide (SiO2) layers formed on Si substrate with nitric acid have been investigated using both acoustic deep-level transient spectroscopy (A-DLTS) and electrical methods to characterize the interface states. The set of SiO2/Si structures formed in different conditions (reaction time, concentrations of nitric acid (HNO3), and SiO2 thickness [3–9 nm]) was prepared. The leakage current density was decreased by post-oxidation annealing (POA) treatment at 250°C in pure nitrogen for 1 h and/or post-metallization annealing (PMA) treatment at 250°C in a hydrogen atmosphere for 1 h. All structures of the set, except electrical investigation, current-voltage (I - V), and capacitance — voltage (C - V) measurements, were investigated using A-DLTS to find both the interface states distribution and the role of POA and/or PMA treatment on the interface-state occurrence and distribution. The evident decreases of interface states and shift of their activation energies in the structures with PMA treatment in comparison with POA treatment were observed in most of the investigated structures. The results are analyzed and discussed.
Wydawca

Czasopismo
Rocznik
Tom
7
Numer
2
Strony
237-241
Opis fizyczny
Daty
wydano
2009-06-01
online
2009-04-26
Twórcy
autor
  • Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia, bury@fel.uniza.sk
  • Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
  • Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
  • Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
autor
  • Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia
  • Department of Physics, Faculty of Electrical Engineering, University of Žilina, Univerzitná 1, 010 26, Žilina, Slovakia
Bibliografia
  • [1] A. Asuha, T. Yusa, O. Maida, H. Kobayashi, Appl. Phys. Lett., 80, 4175, (2002) http://dx.doi.org/10.1063/1.1482147[Crossref]
  • [2] H. Kobayashi, A. Asuha, O. Maido, M. Takahashi, M. Iwasa, J. Appl. Phys., 94, 7328, (2003) http://dx.doi.org/10.1063/1.1621720[Crossref]
  • [3] A. Asuha, T. Kobayashi, M. Takahashi, M. Iwasa, H. Kobayashi, Surf. Sci., 547, 275, (2003) http://dx.doi.org/10.1016/j.susc.2003.09.016[Crossref]
  • [4] H. Kobayashi et al., J. Appl. Phys., 38, 2098, (1998) http://dx.doi.org/10.1063/1.366943[Crossref]
  • [5] Asuha, S. Imai, M. Takahashi, H. Kobayashi, Appl. Phys. Lett., 85, 3783, (2004) http://dx.doi.org/10.1063/1.1804255[Crossref]
  • [6] E. H. Nicollian, J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982)
  • [7] P. Bury , I. Jamnicaka, J. Azuraek, Phy. Status Solidi A 126, 151 (1991) http://dx.doi.org/10.1002/pssa.2211260117[Crossref]
  • [8] P. Bury, I. Jamnicky, Acta Phys. Slovaca, 46, 693, (1996)
  • [9] P. Bury, I. Jamnicky, V. W. Rampton, Physica B, 263-264, 94, (1999) http://dx.doi.org/10.1016/S0921-4526(98)01200-9[Crossref]
  • [10] N. Inone, P. J. Lichtenwalter, J. S. Jur, A. I. Kingon, Jap. J. Appl. Phys., 46, 6480, (2007) http://dx.doi.org/10.1143/JJAP.46.6480[Crossref]
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-009-0029-5
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